Influence of growth temperature and post-annealing on an n-ZnO/p-GaN heterojunction diode

다국어 초록 (Multilingual Abstract)

We report on an n-ZnO/p-GaN heterojunction diode fabricated from zinc oxide (ZnO) films at various growth temperatures (450, 500, 550, and 600 C) by RF sputtering. The films were subsequently annealed at 700 C in N2 ambient. To investigate the influence of the growth temperature of n-ZnO films, the microstructural, optical, and electrical properties were measured using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Hall measurements. The XRD pattern showed the preferred orientation along the c-axis (002) regardless of growth temperature. The PL spectra showed a dominant sharp near-band-edge (NBE) emission. Currentevoltage (IeV) curves showed excellent rectification behavior. The turn-on voltage of the diode was observed to be 3.2 V for the films produced at 500 C. The ideality factor of ZnO film was observed to be 1.37, which showed the best performance of the diode.

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