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김진교,Yuri Sohn,이상화,최혁민 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
In a hot-wall reactor for hydride vapor phase epitaxy (HVPE), the substrate holder was specially designed in such a way that the substrate temperature was much lower than its ambient because of an additional cooling mechanism, and GaN nanorods were grown on these air-cooled substrates. From these experiments, both the substrate temperature itself and the temperature gradient between the substrate and its ambient were found to be critical parameters in the growth of GaN nanorods. In addition, synchrotron X-ray scattering revealed that the GaN nanorods did not contain the cubic phase commonly observed in GaN films grown at low temperatures.
Branching Characteristics of GaN Multipods Grown by Using Hydride Vapor Phase Epitaxy
김진교,Yuri Sohn 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
GaN multipods were grown on c-plane sapphire substrates by using hydride vapor phase epitaxy (HVPE) and their branching characteristics were investigated by utilizing scanning electron microscopy. A catalyst-free vapor-solid growth mechanism gave rise to diversity in the formation of multipods in various structures. We found that the core structure primarily determined the branching configuration of the sideward GaN nanorods. Depending on whether the core had a zincblende structure or wurtzite structure, either 3-fold symmetric multipods without a vertical nanorod or 6-fold multipods were favorably grown.
Lee, Sanghwa,Sohn, Yuri,Kim, Chinkyo,Lee, Dong Ryeol,Lee, Hyun-Hwi IOP Pub 2009 Nanotechnology Vol.20 No.21
<P>Reciprocal space mapping with a two-dimensional (2D) area detector in a grazing incidence geometry was applied to determine crystallographic orientations of GaN nanostructures <I> epitaxially</I> grown on a sapphire substrate. By using both unprojected and projected reciprocal space mapping with a proper coordinate transformation, the crystallographic orientations of GaN nanostructures with respect to that of a substrate were unambiguously determined. In particular, the legs of multipods in the <I>wurtzite phase</I> were found to preferentially nucleate on the sides of tetrahedral cores in the <I>zinc blende phase</I>. </P>
수소기상화합물 증착법을 이용한 질화갈륨(GaN) 박막과 나노막대의 선택적 과성장(ELOG)
오태건(Taegeon Oh),이상화(Sanghwa Lee),최혁민(Hyeokmin Choe),손유리(Yuri Sohn),전재원(Jai Weon Jean),김진교(Chinkyo Kim) 한국생산제조학회 2007 한국공작기계학회 춘계학술대회논문집 Vol.2007 No.-
넓은 에너지 띠를 가지고 있는 GaN는 짧은 파장의 광전소자를 제작하는데 쓰일 수 있으며, 격자상수가 맞는 기판이 없기 때문에 보통 다량의 결정성 결함이 박막 내부에 발생한다. 질화갈륨(GaN)의 Epitaxial lateral overgrowth(ELO)는 GaN의 bulk substrate가 없는 상황에서 이종기판과의 격자상수 차이에 인하여 생기는 다량의 결정성 결함을 줄이기 위한 방편으로서, hydride vapor phase epitaxy(HVPE)를 이용하여 성장조건을 다양하게 변화시켜 가며 ELOG 방식에 의해 성장된 GaN의 표면 형상을 연구해 보았다.
Control of nucleation characteristics of GaN nanograins grown by hydride vapor phase epitaxy
Chinkyo Kim,Boa Shin,Hyeokmin Choe,Jaiwon Jeon,이상화,Taegeon Oh,Yuri Sohn 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III
GaN nanograins were grown by hydride vapor phase epitaxy and the nucleation characteristics of the nanograins were investigated by using secondary electron images. It was found that the density and the diameter of the grains could be {\it independently} controlled by changing the substrate temperature and the flow rate of N$_2$ over a Ga boat. In addition to the independent controllability of the diameter and density, the formation of nanofacets on the individual nanograins was observed to become prominent with increased growth temperature. These nanofacets were inferred to act as quasi-substrates for subsequently adsorbing atoms. In fact, randomly oriented nanorods in consistent with the nanofaceted grains were observed to form with similar growth conditions.