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Zhao Xiao-mei,Lian Yu-ji,Jin Ze-lin,Zhang Xue-jie,Y Yan,Fan Shou-jin 한국식물생명공학회 2022 Plant biotechnology reports Vol.16 No.4
Leaf material explants of Pulsatilla tongkangensis Y. N. Lee & T. C. Lee were used to regenerate plants of this endangered species by somatic embryogenesis and organogenesis from meristematic nodules, induced by MS medium supplemented with zeatin (Zn) and indole-3-acetic acid (IAA). Globular structures were induced on the surface of the explants after 2 weeks and after 6–7 weeks of culture, multiple shoots developed from the nodules. Morpho-histological analysis of light green globular, heart-shaped structures resembling somatic embryos revealed, however, that these were organogenic, with strongly vacuolated parenchymatous cells surrounded by a single layer of epithermal cells, and tracheid elements, but no root pole. Milky-white callus also developed around the nodules after 4–6 weeks. Morpho-histological analysis of the globular, heart-, and torpedo-shaped stages of regenerants present in this callus confirmed the development of somatic embryos in the milky-white structures, characterized by deeply staining, small cells with rich cytoplasm, very little vascular tissue in the developing embryos, and no vascular connection with the surrounding callus. The highest rooting frequency (93.33%) was achieved on MS medium containing 1.5 mg/l NAA. Plantlets were acclimatized and successfully transferred to pots. Our results provide a plant regeneration system with potential for germplasm conservation of endangered plants and the rapid propagation and molecular breeding of P. tongkangensis.
Mechanics of nanowire/nanotube in-surface buckling on elastomeric substrates
Xiao, J,Ryu, S Y,Huang, Y,Hwang, K-C,Paik, U,Rogers, J A IOP Pub 2010 Nanotechnology Vol.21 No.8
<P>A continuum mechanics theory is established for the in-surface buckling of one-dimensional nanomaterials on compliant substrates, such as silicon nanowires on elastomeric substrates observed in experiments. Simple analytical expressions are obtained for the buckling wavelength, amplitude and critical buckling strain in terms of the bending and tension stiffness of the nanomaterial and the substrate elastic properties. The analysis is applied to silicon nanowires, single-walled carbon nanotubes, multi-walled carbon nanotubes, and carbon nanotube bundles. For silicon nanowires, the measured buckling wavelength gives Young’s modulus to be 140 GPa, which agrees well with the prior experimental studies. It is shown that the energy for in-surface buckling is lower than that for normal (out-of-surface) buckling, and is therefore energetically favorable. </P>
Ultrasound-assisted brazing of Cu/Al dissimilar metals using a Zn-3Al filler metal
Xiao, Y.,Ji, H.,Li, M.,Kim, J. Scientific and Technical Press ; Elsevier Science 2013 Materials & design Vol.52 No.-
Ultrasound-assisted brazing of Cu/Al dissimilar metals was performed using a Zn-3Al filler metal. The effects of brazing temperature on the microstructure and mechanical properties of Cu/Al joints were investigated. Results showed that excellent metallurgic bonding could be obtained in the fluxless brazed Cu/Al joints with the assistance of ultrasonic vibration. In the joint brazed at 400<SUP>o</SUP>C, the filler metal layer showed a non-uniform microstructure and a thick CuZn<SUB>5</SUB> IMC layer was found on the Cu interface. Increasing the brazing temperature to 440<SUP>o</SUP>C, however, leaded to a refined and dispersed microstructure of the filler metal layer and to a thin Al<SUB>4.2</SUB>Cu<SUB>3.2</SUB>Zn<SUB>0.7</SUB> serrate structure in the Cu interfacial IMC layer. Further increasing the brazing temperature to 480<SUP>o</SUP>C resulted in the coarsening of the filler metal and the significantly growth of the Al<SUB>4.2</SUB>Cu<SUB>3.2</SUB>Zn<SUB>0.7</SUB> IMC layer into a dendrite structure. Nanoindentation tests showed that the hardness of the Al<SUB>4.2</SUB>Cu<SUB>3.2</SUB>Zn<SUB>0.7</SUB> and CuZn<SUB>5</SUB> phase was 11.4 and 4.65GPa, respectively. Tensile strength tests showed that all the Cu/Al joints were failed in the Cu interfacial regions. The joint brazed at 440<SUP>o</SUP>C exhibited the highest tensile strength of 78.93MPa.
Xiao, Y.,Ji, H.,Li, M.,Kim, J.,Kim, H. Scientific and Technical Press ; Elsevier Science 2013 Materials & design Vol.47 No.-
The ultrasound-assisted brazing of 1060 Al alloy using a Zn-14Al hypereutectic filler metal was investigated at different temperatures. The effects of brazing temperature on the bonding ratio, shear strength and microstructure of the joints were studied. Cavities and discontinuous cracks were found in the joint ultrasonically brazed at 410<SUP>o</SUP>C, and the joint showed a low bonding ratio and poor shear strength. Excellent bonding ratios and high shear strength were obtained in the joints ultrasonically brazed at 440<SUP>o</SUP>C and 470<SUP>o</SUP>C. The primary α-Al phase showed a refined spherical shape in the joint ultrasonically brazed at 440<SUP>o</SUP>C, but showed a coarse dendritic structure in the joint ultrasonically brazed at 470<SUP>o</SUP>C and that brazed at 440<SUP>o</SUP>C without ultrasonic vibration. The refined spherical microstructure shown in the joint ultrasonically brazed at 440<SUP>o</SUP>C was attributed to cavitation-aided grain refinement effects.
Y.G. Xiao,M.H. Tang,Y. Xiong,J. C. Lin,C.P. Cheng,B. Jiang,H.Q. Cai,Z.H. Tang,X.S. Lv,X.C. Gu,Y.C. Zhou 한국물리학회 2012 Current Applied Physics Vol.12 No.6
The surface potential and drain current of double-gate metal-ferroelectric-insulator-semiconductor (MFIS) field-effect transistor were investigated by using the ferroelectric negative capacitance. The derived results demonstrated that the up-converted semiconductor surface potential and low subthreshold swing S = 34 (<60 mV/dec) can be realized with appropriate thicknesses of ferroelectric thin film and insulator layer at room temperature. What’s more, a reduction gate voltage about 260 mV can be reached if the ON-state current is fixed to 600 mA/mm. It is expected that the derived results can offer useful guidelines for the application of low power dissipation in ongoing scaling of FETs.
A class of generalized evolution variational inequalities in Banach spaces
Xiao, Y.b.,Huang, N.j.,Cho, Y.J. Pergamon Press ; Elsevier Science Ltd 2012 APPLIED MATHEMATICS LETTERS Vol.25 No.6
In the present paper, a class of generalized evolution variational inequalities arising in a number of quasistatic frictional contact problems for viscoelastic materials is introduced and studied. Using Banach's fixed point theorem, the existence and uniqueness theorem of the solution for the generalized evolution variational inequalities is proved under some suitable assumptions.