SrCI_2:Eu^2+ 형광체의 광발광 및 광자극발광 특성

도시홍,서효진,김영국,김도성,김성환,김찬중,이병화,김완,강희동 한국센서학회 2002 센서학회지 Vol.11 No.6

고상반응법으로 SrCl_2:Eu^2+ 형광체를 제작하고, 제작한 형광체의 광자극발광과 광발광 특성을 조사하였다. SrCl_2:Eu^2+ 형광체와 광발광 및 광자극발광은 Eu^2+ 의 5d->4f 천이에 기인되었으며, 355 nm의 광으로 여기시켰을 때 광자극발광과 광발광 스펙트럼의 파장범위는 모두 380~440nm이었고, 피이크 파장은 407nm이었다. SrCl_2:Eu^2+형광체의 선량의존성은 2.5 mGy~200mGy영역에서 우수한 선형성을 나타내었으며, 상온에서 광자극발광의 fading은 20분에 60%이었다. SrCl_2:Eu^2+ phosphors were prepared by the solid phase reaction method, and their photostimulated luminescence(PSL) and photoluminescence(PL) characteristics were investigated. The PSL and PL peak of the SrCl_2:Eu^2+ phosphors are due to the 5d->4f transition of Eu^2+ ions in phosphors. The PSL and PL spectrum obtained by the 355 nm exitation was observed in 380~440 nm region with the peak at 407 nm. The dose response of the PSL phosphors were linear within 2.5 mGy ~ 200 mGy of 100kV X-ray. The fading of the phosphors at room temperature was approximately 60% after 20 min.

CsI(Ag) 단결정의 육성과 섬광특성

도시홍,이우교,오문영,정용조,강갑중,김도성,김완,강희동 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1

CsI(Ag) single crystals doped with 0.001, 0.003 and 0.005 mole % silver as activator were grown using the Czochralski method. The gamma ray energy spectrum is measured by the CsI(Ag) single crystals coupled to photomultiflier tube. It was confirmed that the crystal structure of grown CsI(Ag) was bcc, and that its lattice constant was 4.568Å. The energy resolution of CsI(Ag) for Cs-137 gamma ray was maximum when CsI(Ag) was doped 0.003 mole % silver, and its value was 9.84% the pulse height from the scintillation detector system using the CsI(Ag) single crystals was linear to gamma ray energy.

BaFBr:Eu^2+ 형광체의 열발광 및 광자극발광 특성

도시홍,서효진,강갑중,김영국,김도성,김성환,김찬중,이병화,김완,강희동 한국센서학회 2002 센서학회지 Vol.11 No.5

BaFBr:Eu^2+ 형광체를 제조하고, 이 형광체의 열발광 특성과 광자극발광 특성을 조사하였다. 이 형광체의 열발광 g1ow 피이크 온도는 352K와 448K였으며, 주 피이크(352K)에 관여하는 트랩의 활성화에너지는 약 0.96eV이었다. 또한 이 형광체의 광자극발광 스펙트럼의 파장범위는 350~450nm 사이였으며, 광자극발광에 기여하는 트랩의 활성화에너지는 약 0.98eV이었다. 열발광트랩과 광자극발광 트랩의 활성화에너지는 실험오차 내에서 일치하였다. BaFBr:Eu^2+ phosphors were prepared, and the thermoluminescence(TL) and photostimulatedluminescence(PSL) of the prepared phosphors were measured. Two glow peaks around 352 and 448 K are observed for x-ray irradiated BaFBr:Eu^2+ phosphors, and the activation energy of the main glow peak(352 K) was about 0.96 eV. The spectral range of the PSL was 350 ~450 nm, and the activation energy of the trap giving rise to PSL was about 0.98 eV. The activation energy of the traps giving rise to TL is agreed to those giving rise to PSL within experimental error.

Schottky Diode의 製作 및 特性

姜榮浩,李相潤,都是弘 慶北大學校 1972 論文集 Vol.16 No.-

Surface barrier diodes have been fabricated by evaporating gold film (about 400 Å in thickness) on n-type silicon wafers whose resistivity was 50 ohm-cm. The breakdown voltage at room temperature was [about 30 volts, and the variation of saturation current ΔI_S as the function of temperature T(˚K) and illumination L(lux) were expressed in the form of ΔI_S=I_0 exp (α/T) and ΔI_L=KL, respectively, where I_0=3.98(A), α=-4.6×10_3(deg), and K=3.6×10^-9(A/lux.) The α-ray energy resolution for Am^241 and Ra^226 of the detectors which employed these diodes was about 5%.

Lif(Mg, Cu, Na, Si) 열형광선량계를 사용한 60 Cr- 선의 수중흡수선량 측정

김현자,정운혁,이우교,도시홍 대한방사선 방어학회 1990 방사선방어학회지 Vol.15 No.2

새로 개발한 LiF(Mg, Cu, Na, Si)열형광선량계를 사용하여 60Co원격조사장치에 의한 수중흡수 선량을 측정하였다. 공기중 조사선량으로부터 TLD공동의 흡수선량 교정인자(DTLD/TL)를 결정하였고, 수중흡수선량은 TLD공동의 흡수선량을 측정하여 공동이론에 의해 해석하였다. 10×10cm 2 및 5×10cm 2의 빔 크기에서 팬텀내 여러지점에 대하여 LiF(Mg, Cu, Na, Si) TLD로 수중흡수선량을 결정하고 동일한 위치에서 NE 2561전리함을 사용하여 측정한 값과 비교한 결과, LiF(Mg, Cu, Na, Si)TLD의 측정오차(±3%)범위내에서 잘 일치 하였다. 빔의 크기가 5×5cm 2, 10×10cm 2 및 30×30cm 2인 경우에 깊이-선량 백분율과 팬텀-공기 선량비를 측정하였으며 이 값들은 British Journal of Radiology(1983)의 데이터와 잘 일치하였다. Newly developed LiF(Mg, Cu, Na. Si) thermoluminescence phosphors sealed in a plastic capsules(3.2mm dia., 0.9mm wall thickness) were used for in-phantom dosimetry of 60Co r-irradiation. The absorbed doses in water were determined by applying the general cavity theory to the absorbed dose in TLD cavity, which was computed from exposure. The absorbed doses at various sites in the water-phantom were measured by LiF(Mg, Cu, Na, Si) TLD and compared with doses obtained by the ionization method. Both results were consistent within the experimental fluctuation(±3%). Central axis percentage depth doses and phantom-air ratios measured by LiF(Mg, Cu. Na, Si) TLD showed good agreement with the published values [Br. J. Radiology. Suppl. 17(1983)].

BaFBr:Eu²+,Na+ 영상판 제작과 특성

김찬중,김성환,이병화,김완,강희동,김도성,서효진,도시홍 경북대학교 센서기술연구소 2002 센서技術學術大會論文集 Vol.13 No.1

불순물 첨가 BGO 섬광체 단결정의 육성과 열형광 특성

김성철,김중환,김종일,정중현,도시홍,김기동,이대원 동의대학교 기초과학연구소 1996 基礎科學硏究論文集 Vol.6 No.1

Eu or Fe doped BGO scintillation crystals were grown by Czochralski method. In order to get information about traps in the grown BGO crystals, we measured trap parameters including activation energy, frequency factor and the kinetic order of thermoluminescence, and compared such parameters with thermoluminescent characteristics of pure BGO scintillation crystals. In addition, optical transmittance of the grown BGO crystals was measured.

지방자치단체의 행정구역 경계조정에 관한 연구

이시화 평택대학교 사회과학연구소 2006 사회과학연구 Vol.10 No.-

도서벽지(島嶼僻地)와 도시 아동의 체격 및 체력에 관한 연구 : 경남지방 국민학교를 중심으로

이영웅,강진홍,유덕시 경상대학교 경남문화연구소 1979 慶南文化硏究 Vol.2 No.1

Ⅰ. Purpose. To grasp the standard date for the physical fitness Demote islands and a city primary school students during the period 6 years-11 years, a physical fitness test was made, involving a total gf 69,616 students(35,946 boys and 33,670 girls) Ⅱ. Classification of the Measurement. For the Convenience of the Measurement, the Following Categories were chosen major items to be tested in the physical Fitness test. 1. Body status a. Height b. body weight c. chest girth d. sitting height 2. physical fitness a. 100meter sprint b. 600meter endurance run c. Runway broad jump d. hand grenade throw e. pull-ups(M) Flexed Arm hang(F) f. shuttle run g. Sit ups h. Forward flexion trunk Ⅲ. Discription 1. Male height of remote islande students was average 113.38㎝ at the age of 6, 135.63㎝ at the ages of 11 and so 6-year-old-students seemed to be grown up to 22.25㎝ in a city, male height was 114.51㎝ at the age of 6, 138.48㎝ the age of 11 and so they seemed to be grown up to 23.97㎝. Female height of remote island students was average 112.12㎝ at the age of 6, 136.53㎝ at the ages of 11 and so they Seemed to have grown 24.41㎝ in a city, female height was 113.81㎝ at the age of 6, 140.30㎝ at the age of 11, and so they seemed to have grown up 26.49㎝. 2. Male weight of remote islands 30.46㎏ at the age of 11 and so they seemed to have increased 11.27㎏. In a city, female weight was 19.32㎏ at the age of 6, 31.04㎏ at the age of il and so they seemed to have increased 11.72㎏. Female weight of remote island students was an average of 18.47㎏ at the age of 6, 32.13㎏ at the age of 11 and so they seemed increased 13.65㎏ during the age of 6. 3. Chest girth of male was 57.55㎝ at the of 6, 67.24㎝ at the of 11 remote islands Students and so they increased 9.69㎝ at the age of 6, In a city, chest girth of male was 56.66㎝ at the age of 6, 66.42em at the age of so they increased 9.76㎝ chest girth of female was 56.60㎝ at the age of 6, 66.45㎝ at the of 11 remote island students and so they increase 9.85㎝ than at the age of 6, In a city, that of female was 55. 29㎝ at the age of 6, 65. 81㎝ at 11 and so they increased 10.52㎝ than at the age of 6. 4. Male suiting height of remote islande Students was 64.08㎝ at the age of 6, 74.43㎝ at 11 and so they seemed to have increased 10.35㎝. one of city male was 65. 55㎝ at the age of 6, 74.81㎝ at 11 ages the seemed to have increased 9.26㎝. Female sitting height of remote island Students was 63.53㎝ at the age of 6, 74.68㎝ at the age of 11 so they seemed to have increased 9.26㎝ to one at the age of 6. 5. In the average body status, the boys, between 6-10 were superior to that of girls however, from 11-year-old -girl. the status of the girls was better than that of the boys. 6. Students in the city were superior to those in remote island not only in the body status but also in the field of the shuttle run, Runway broad jump, and the forward flexion of trunk, with require promptness. agility, flexibility power, But the remote island Students in a city area showed the heighter records than those in the city of 600m endurance run, hand grenade throw and pull-ups, with require strength, endurance, holding and hanging.

Characteristics of ZnO-based TFT Using La2O3 High-k Dielectrics

문연건,Sih Lee,박종완,김도현,Je-Hun Lee,정창오 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5

In order to reduce the operation voltage of the ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous La2O3 high-k dielectrics. ZnO, as a channel layer, and ITO, as source/drain electrodes, are deposited by DC magnetron sputtering, and La2O3 high-k dielectrics are deposited by using electron cyclotron resonance-atomic layer deposition (ECR-ALD). The deposition conditions of the gate insulator were optimized for leakage current, breakdown field, and high device performance. ZnO-TFTs with high-k La2O3 gate insulators exhibited good performance. The average channel mobility, turn-on voltage, ratio of the on current to the off current, and subthreshold swing were 0.77 cm2/Vs, −0.8 V, 105, and 1.2 V/decade, respectively. We compared the characteristics of a device consisting of La2O3 to those of a device consisting of SiO2 to examine their potential for use as high-k dielectrics in future TFT devices. In order to reduce the operation voltage of the ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous La2O3 high-k dielectrics. ZnO, as a channel layer, and ITO, as source/drain electrodes, are deposited by DC magnetron sputtering, and La2O3 high-k dielectrics are deposited by using electron cyclotron resonance-atomic layer deposition (ECR-ALD). The deposition conditions of the gate insulator were optimized for leakage current, breakdown field, and high device performance. ZnO-TFTs with high-k La2O3 gate insulators exhibited good performance. The average channel mobility, turn-on voltage, ratio of the on current to the off current, and subthreshold swing were 0.77 cm2/Vs, −0.8 V, 105, and 1.2 V/decade, respectively. We compared the characteristics of a device consisting of La2O3 to those of a device consisting of SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.