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Electric Field-Triggered Metal-Insulator Transition Resistive Switching of Bilayered Multiphasic VOX
Seokjae Won,이상연,Jungyeon Hwang,Ju-Cheol Park,서형탁 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.1
Electric field-triggered Mott transition of VO2 for next-generationmemory devices with sharp and fast resistance-switching response isconsidered to be ideal but the formation of single-phase VO2 bycommon deposition techniques is very challenging. Here, VOx filmswith a VO2-dominant phase for a Mott transition-based metal-insulatortransition (MIT) switching device were successfully fabricated by thecombined process of RF magnetron sputtering of V metal andsubsequent O2 annealing to form. By performing various materialcharacterizations, including scanning transmission electron microscopyelectronenergy loss spectroscopy, the film is determined to have abilayer structure consisting of a VO2-rich bottom layer acting as theMott transition switching layer and a V2O5/V2O3 mixed top layeracting as a control layer that suppresses any stray leakage current andimproves cyclic performance. This bilayer structure enables excellentelectric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratioreaching ~200, set/reset voltage of less than 2.5 V, and very stable DCcyclic switching upto ~120 cycles with a great set/reset current andvoltage distribution less than 5% of standard deviation at roomtemperature, which are specifications applicable for neuromorphic ormemory device applications.
Enabling technologies for AI empowered 6G massive radio access networks
Md. Shahjalal,Woojun Kim,Waqas Khalid,Seokjae Moon,Murad Khan,ShuZhi Liu,Suhyeon Lim,Eunjin Kim,Deok-Won Yun,Joohyun Lee,Won-Cheol Lee,Seung-Hoon Hwang,Dongkyun Kim,Jang-Won Lee,Heejung Yu,Youngchul S 한국통신학회 2023 ICT Express Vol.9 No.3
Predictably, the upcoming six generation (6G) networks demand ultra-massive interconnectivity comprising densely congested sustainable small-to-tiny networks. The conventional radio access network (RAN) will be redesigned to provide the necessary intelligence in all areas to meet required network flexibility, full coverage, and massive access. In this respect, this paper focuses on intelligent massive RAN (mRAN) architecture and key technologies fulfilling the requirements. Particularly, we investigate potential AI algorithms for network and resource management issues in 6G mRAN. Furthermore, we summarize the research issues in edge technologies and physical layer intelligence on 6G network architecture.
SARA: Sparse Code Multiple Access-Applied Random Access for IoT Devices
Moon, Seokjae,Lee, Hyun-Suk,Lee, Jang-Won IEEE 2018 IEEE Internet of things journal Vol.5 No.4
<P>In this paper, we study a random access (RA) procedure to support the massive connectivity of the Internet of Things (IoT) devices, also known as the IoT connectivity. Compared with the previous RA procedures that have limitations to support the IoT connectivity due to the exponentially increased access delay, we develop an RA procedure by applying the sparse code multiple access to reduce the access delay and increase the ratio of the IoT devices that successfully complete their RA procedures. We provide the theoretical performance analysis of the proposed RA procedure with the performance metrics, such as the RA success probability, the average access delay, the RA throughput, and the average number of preamble transmissions. Then, we provide the numerical results to evaluate the performance of the proposed RA procedure based on our analysis and the ns-3 simulator. Numerical results show that our proposed RA procedure is able to support the massive connectivity requirement with improved RA performance metrics compared with the conventional RA procedures.</P>