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RISS 인기검색어
- 검색키워드
- 저자 : S.S. Cetin (검색결과 2 건)
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O. Kelekci,P. Tasli,S.S. Cetin,M. Kasap,S. Ozcelik,E. Ozbay 한국물리학회 2012 Current Applied Physics Vol.12 No.6
We investigate the structural and electrical properties of AlxIn1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested AlxIn1-xN/AlN/GaN/Al0.04Ga0.96N heterostructures when compared to the standard AlxIn1exN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al0.04Ga0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the AlxIn1-xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible. We investigate the structural and electrical properties of AlxIn1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested AlxIn1-xN/AlN/GaN/Al0.04Ga0.96N heterostructures when compared to the standard AlxIn1exN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al0.04Ga0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the AlxIn1-xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible.
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Onbasilar, E.E.,Poyraz, O.,Cetin, S. Asian Australasian Association of Animal Productio 2008 Animal Bioscience Vol.21 No.2
The aim of this study was to determine the effects of breeder age and stocking density on performance, carcass characteristics and some stress parameters (H-L ratio, serum glucose, cholesterol and triglyceride levels, tonic immobility test (TI), antibody production, relative asymmetry (RA) and external appearances). This experiment was carried out with 705 one-day old male broiler chicks (Ross 308) obtained from three different ages of broiler breeder (32, 48 and 61 wks). Each age group was randomly divided into two stocking density groups (11.9 and 17.5 broilers per $m^2$) with 5 replications per group. The experimental period was 6 weeks. Broilers from 32 wk-old breeders had lower initial weight (p<0.001), body weight gain of the first 3 week of rearing (p<0.01), the percentage of abdominal fat (p<0.001) and serum cholesterol level (p<0.01); higher percentage of gizzard (p<0.01) and longer TI duration (p<0.001) than those from 48 and 61 wk-old breeders. Broilers reared at 17.5 b/m2 had lower final BW, body weight gain, feed consumption, feather condition and foot health (p<0.001), higher percentage of heart, H-L ratio, serum glucose and cholesterol levels (p<0.001), and longer TI durations (p<0.001). There were no significant interactions in examined parameters except for feed to gain ratio between breeder age and stocking density.
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