http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Effects of high-temperature postannealing on magnetic properties of Co-doped anataseTiO2thin films
Kim, D. H.,Yang, J. S.,Kim, Y. S.,Noh, T. W.,Bu, S. D.,Baik, S.-I.,Kim, Y.-W.,Park, Y. D.,Pearton, S. J.,Kim, J.-Y.,Park, J.-H.,Lin, H.-J.,Chen, C. T.,Song, Y. J. American Physical Society 2005 Physical review. B, Condensed matter and materials Vol.71 No.1
J.K. Kim,J.H. Lee,Y.W. Joo,Y.H. Park,H.S. Noh,J.W. Lee,S.J. Pearton 한국물리학회 2010 Current Applied Physics Vol.10 No.2
We studied nonselective, vertical dry etching of GaAs and AlGaAs/GaAs structure in high pressure capacitively coupled BCl3/N2 plasmas. The operating pressure was fixed at 150 m Torr. We found that there was an optimized process condition for nonselective and vertical etching of GaAs and AlGaAs/GaAs at the relatively high pressure. It was noted that there was a range of % N2 (i.e. 20–40%) where nonselective etching of GaAs over AlGaAs could be achieved in the BCl3/N2 mixed plasma. We also found that dry etching of GaAs and AlGaAs/GaAs structure provided quite vertical and smooth surface when % N2 was in the range of 0–20% in the BCl3/N2 plasma. The maximum etch rates for GaAs (0.41 ㎛/min) and AlGaAs/GaAs structure (0.42 ㎛/min) were obtained with 20–30% N2 composition in the plasma.
High-Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates
S.Kim,B.S.Bang,F.Ren,J.d’Entremont,W.Blumenfeld,T.Cordock,S.J.Pearton 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.3
CO₂ laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 um.min -1 were ohtained for pulse energies of 7.5-30 mJ over diameters of 50-500 um with a Q-switched pulse width of -30 nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 f1I11/min) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/ AIN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate suhsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.<br/>
Simple fabrication of nanoporous films on ZnO for enhanced light emission
Bang, J.,Kim, K.,Mok, S.,Ren, F.,Pearton, S. J.,Baik, K. H.,Kim, S. H.,Kim, J.,Shin, K. WILEY-VCH Verlag 2007 Physica status solidi. PSS. A, Applications and ma Vol.204 No.10
<P>High density nanoporous patterns were imprinted on bulk ZnO single-crystal substrates. The nanostamps were prepared via replication from nanoporous anodized alumina. Using the nanoimprinting technique, nanopatterns were successfully transferred onto the ZnO surface. Here we demonstrate that the light emitting efficiency of ZnO is highly enhanced through the simple nano-texturing. This simple method is applicable to any other light emitting diodes where the antireflective surface coating is desirable. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
High -Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AlN/SiC Templates
Kim, S.,Bang, B.S.,Ren, F.,d'Entremont, J.,Blumenfeld, W.,Cordock, T.,Pearton, S.J. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.3
[ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.
Band Offsets in YSZ/InGaZnO<sub>4</sub> Heterostructure System
Kim, J.K.,Kim, K.-W.,Douglas, E.A.,Gila, B.P.,Craciun, V.,Lambers, E.S.,Norton, D.P.,Ren, F.,Pearton, S.J.,Cho, H. American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.5
The energy discontinuity in the valence band (Delta E-V) of Y2O3-stabilized ZrO2 (YSZ)/InGaZnO4 (IGZO) heterostructures was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The YSZ exhibited a bandgap of 4.4 eV from absorption measurements. A value of Delta E-V = 0.57 +/- 0.12 eV was obtained by using Ga 2p(3/2), Zn 2p(3/2) and In 3d(5/2) energy levels as references. This implies a conduction band offset (Delta E-C) of 0.63 eV in YSZ/InGaZnO4 heterostructures and a nested interface band alignment.
Lee, G. S.,Lee, C.,Choi, H.,Ahn, D. J.,Kim, J.,Gila, B. P.,Abernathy, C. R.,Pearton, S. J.,Ren, F. WILEY-VCH Verlag 2007 Physica status solidi. PSS. A, Applications and ma Vol.204 No.10
<P>PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc<SUB>2</SUB>O<SUB>3</SUB>/GaN/Sapphire structures for use as selective NH<SUB>3</SUB> gas sensors. The Sc<SUB>2</SUB>O<SUB>3</SUB> was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga<SUB>2</SUB>O<SUB>3</SUB>. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>