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- 저자 : Ruirui Xia (검색결과 2 건)
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Xia Wentao,Cheng Miao,Hu Jing,Liu Qianqian,Wei Tao,Wang Ruirui,Li Wanfei,Liu Bo 한국탄소학회 2024 Carbon Letters Vol.34 No.1
N-doping content and configurations have a significant effect on the electrochemical performance of carbon anodes. Herein, we proposed a simple method to synthesize highly N self-doped chitosan-derived carbon with controllable N-doping types by introducing 2ZnCO3·3Zn(OH)2 into the precursor. The as-synthesized NC-CS/2ZnCO3·3Zn(OH)2 electrode exhibited more than twice the reversible capacity (518 mAh g−1 after 100 cycles at 200 mA g−1) compared to the NC-CS electrode, superior rate performance and outstanding cycling stability. The remarkable improvement should be mainly attributed to the increase of N-doping content (particularly the pyrrolic-N content), which provided more active sites and favored Li+ diffusion kinetics. This study develops a cost-effective and facile synthesis route to fabricate high-performance N self-doped carbon with tunable doping sites for rechargeable battery applications.
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SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity
Yuexin Gao,Xiaowu Cai,Zhengsheng Han,Yun Tang,Liqiang Ding,Ruirui Xia,Mali Gao,Fazhan Zhao 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.5
Noise immunity is a critical index of high-voltage half-bridge gate driver integrated circuits (IC). Various noise cancelation technologies have been proposed to improve dv/dt noise immunity with sacrifices in terms of area and propagation delay time. Besides, when it is applied to an inductive load, the half-bridge driver is vulnerable to negative surges at the VS terminal, which is the offset ground of the high-side channel. A 300 V half-bridge gate driver IC with noise rejection module is designed in this paper. The noise immunity can be improved to 87.5 V/ns. The VS negative swing region can be extended to − 5.1 V. In addition, the proposed driver IC can work normally at a working frequency of 500 kHz and the delay matching time between the high-side and the low-side is less than 4 ns. The propagation delay time of the high-side channel is measured at 71.6 ns. Furthermore, gamma ray irradiation experimental results show that the proposed structure presents a good radiation tolerance of 100 krad (Si). The presented half-bridge gate driver IC is fabricated with the silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, which occupied an area of 1.86 mm2.
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