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Rudolph M. Morrow,Gary E. McIlvian,Jenifer Johnson,Mark K. Timmons 대한견주관절학회 2022 대한견주관절의학회지 Vol.25 No.3
Background: Medial elbow laxity develops in throwing athletes due to valgus forces. Medial elbow instability in professional, collegiate, and high school athletes is well documented; however, the medial elbow of young throwing athletes has received less attention. This study investigated the medial elbow and common flexor tendon during applied elbow valgus stress of youth baseball players. Methods: The study included 15 participants. The medial elbow width and thickness of the common flexor tendon were measured on ultrasound images. Results: No significant side differences in medial elbow width or common flexor tendon were found at rest or under applied valgus stress. At rest, the medial elbow joint width was 3.34±0.94 mm on the dominant side and 3.42±0.86 mm on the non-dominant side. The dominant side increased to 3.83±1.02 mm with applied valgus stress, and the non-dominant side increased to 3.96±1.04 mm. The mean flexor tendon thickness was 3.89±0.63 mm on the dominant side and 4.02±0.70 mm on the non-dominant side. Conclusions: These findings differ from similar studies in older throwing athletes, likely because of the lack of accumulated stress on the medial elbow of youth throwing athletes. Maintaining elbow stability in young throwing athletes is a vital step to preventing injury later in their careers.
Rudolph, Anja,Song, Minsun,Brook, Mark N,Milne, Roger L,Mavaddat, Nasim,Michailidou, Kyriaki,Bolla, Manjeet K,Wang, Qin,Dennis, Joe,Wilcox, Amber N,Hopper, John L,Southey, Melissa C,Keeman, Renske,Fas Oxford University Press 2018 International journal of epidemiology Vol.47 No.2
<P>Conclusions: The combined effects of the 77-SNP PRS and environmental risk factors for breast cancer are generally well described by a multiplicative model. Larger studies are required to confirm possible departures from the multiplicative model for individual risk factors, and assess models specific for ER-negative disease.</P>
Crystal growth from melt in combined heater-magnet modules
Rudolph, P.,Czupalla, M.,Dropka, N.,Frank-Rotsch, Ch.,KieBling, F.M.,Klein, O.,Lux, B.,Miller, W.,Rehse, U.,Root, O. The Korea Association of Crystal Growth 2009 韓國結晶成長學會誌 Vol.19 No.5
Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.
Rudolph C. Troike,박매란 팬코리아영어교육학회 2001 영어교육연구 Vol.13 No.1
The purpose of the present study is to compare the bilingual experience in the U.S. and Canada with the current elementary school English program in Korea and attempt to gain insights which may help enhance the quality of the elementary school English program in the future.
Semi-Insulating 4~6-Inch GaAs Crystals Grown in Low Temperature Gradients by the VCz Method
P.Rudolph,M.Czupalla,Ch.Frank-Rotsch,F.Kiessling,M.Neubert,M.Pietsch 한양대학교 세라믹연구소 2003 Journal of Ceramic Processing Research Vol.4 No.2
The results of growth of semi-insulating GaAs crystals with diameters of 100-150 mm and lengths up to 200 mm from the melt with starting charges up to 25 kg by the low-temperature gradient Vapour Pressure Controlled Czochralski method (VCz) are given and compared with the state of art of LEC growth. The methodical process optimization was assisted by global numerical simulations. A slightly convex interface morphology has been found to be the most suitable for moderate EPD of ~104 cm-2 in 150-mm crystals whilst simultaneously depressing the probability of dislocation bunchings. The carbon concentration was controlled down to values below 1014 cm-3. Electrical properties, including the EL2° content, are discussed. The first results of GaAs VCz crystals grown without B2O3 encapsulant are given. A reduced boron concentration but enhanced carbon and vacancy concentrations have been observed.