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Ritesh Gupta,Ravneet Kaur,Sandeep Kr Aggarwal,Mridula Gupta,R. S. Gupta 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.1
Improvement in breakdown voltage (BVds) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length (Lg), but due to lithographic limitation, shortening Lg below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate on to the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the BVds of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in BVds can be obtained by applying field plates, especially at the drain side. The important parameters affecting BVds and cut-off frequency (fT) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, Γ-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.
Optimization of InAlAs/InGaAs HEMT Performance for Microwave Frequency Applications and Reliability
Ritesh Gupta,Sandeep Kumar Aggarwal,Mridula Gupta,R.S.Gupta 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.3
In the present paper efforts have been made to optimize InALs/lnGaAs HEMT by enhancing the effective gate voltage (Vo-Voft) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the dewice performance. Then the optimized value of Vo-Voft and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the device for different channel depths and gate lengths.<br/> Index Terms-InAlAs/InGaAs heterostructure, delta doped, uniformly doped, pulsed doped, parallel conduction, channel confinement and breakdown, woltage<br/>
Ritesh Gupta,Sandeep Kr Aggarwal,Mridula Gupta,R. S. Gupta 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.3
A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.
Gupta, Ritesh,Aggarwal, Sandeep Kr,Gupta, Mridula,Gupta, R.S. The Institute of Electronics and Information Engin 2006 Journal of semiconductor technology and science Vol.6 No.3
A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.
Optimization of InAlAs/InGaAs HEMT Performance for Microwave Frequency Applications and Reliability
Gupta, Ritesh,Aggarwal, Sandeep Kumar,Gupta, Mridula,Gupta, R.S. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.3
In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.
Gupta, Ritesh,Kaur, Ravneet,Aggarwal, Sandeep Kr,Gupta, Mridula,Gupta, R.S. The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.1
Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.
Gupta, Ritesh,Aggarwal, Sandeep Kumar,Gupta, Mridula,Gupta, R.S. The Institute of Electronics and Information Engin 2007 Journal of semiconductor technology and science Vol.7 No.2
A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.
Comparison of Hybrid Security Schemes : A Survey
Ritesh Bansal,Atefeh Hediayti,Jitisha Aggrawal,Bhanushree Sorlan,Shailender Gupta 보안공학연구지원센터 2016 International Journal of Signal Processing, Image Vol.9 No.8
In today’s age, communication through internet has become inseparable entity of many applications. These applications often require secrecy of data to be transmitted for security reasons. Therefore, commonly used security mechanisms such as cryptography and steganography can be employedto provide security, however using these techniques standalone often poses security threats. Therefore, a hybrid approach can be used for improving security features. In this paper comparison is drawn of recently published hybrid security mechanisms on the basis of following parameters: Visual assessment, Encrypted code Analysis, Similarity Analysis, Peak Signal Noise Ratio (PSNR), Information Entropy Analysis, Embedding Capacity Analysis, Key space analysis. The schemes are implemented and comparedusing MATLAB-2015.
Design of Wideband Inverted Sinc Shaped Monopole Antenna for Wireless Applications
Ritesh Kumar Badhai,Nisha Gupta 보안공학연구지원센터 2016 International Journal of Signal Processing, Image Vol.9 No.1
A novel wideband inverted Sinc shaped printed monopole antenna is proposed for wireless devices. The proposed configuration not only realizes the monopole antenna in compact form but also depicts good radiation characteristics for wideband operations. A detailed parametric study has been carried out for different size of the ground plane, feed gap and Sinc strip length. By selecting the proper dimensions of ground plane, feed gap and Sinc strip length, the broadband operation for the proposed design can be achieved and the obtained impedance bandwidth covers the 2855-5081 MHz band. The proposed monopole antenna provides a wide frequency band of about 56% for wireless operation. The peak gain and efficiency of the proposed antenna are 4.05 dBi and 92.20 % respectively. Finally a prototype model is developed for the most effective configuration and the simulated results are validated experimentally. It is seen that the proposed antenna occupies small area and is suitable for operation at radio navigation, space research, amateur radio, aviation, public safety mobile, fixed mobile and fixed satellite communication frequencies.
Analysis of Various Cryptography Techniques : A Survey
Neha Tayal,Ritesh Bansal,Shailender Gupta,Sangeeta Dhall 보안공학연구지원센터 2016 International Journal of Security and Its Applicat Vol.10 No.8
Maintaining the confidentiality of data during communication has always been a prime concern of many researchers. Several encryption mechanisms have been developed in order to protect the secret data from the access of unauthorized users. Encryption can be thought of as a set of instruction used for conversion of data from a readable state to nonsense form. An encryption scheme is said to be effective if it provides high security, low computational time and high brute force search time for hackers. This paper is an effort to compare all the text based encryption schemes mentioned in literature. These schemes are implemented in MATLAB-2010 and their efficacy is compared based on various performance metrics such as time complexity, Correlation, Key sensitivity analysis, Differential attack analysis and Entropy. These results can be fruitful for researchers working in this direction.