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MBus: A Fully Synthesizable Low-power Portable Interconnect Bus for Millimeter-scale Sensor Systems
Lee, Inhee,Kuo, Ye-Sheng,Pannuto, Pat,Kim, Gyouho,Foo, Zhiyoong,Kempke, Ben,Jeong, Seokhyeon,Kim, Yejoong,Dutta, Prabal,Blaauw, David,Lee, Yoonmyung The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.6
This paper presents a fully synthesizable low power interconnect bus for millimeter-scale wireless sensor nodes. A segmented ring bus topology minimizes the required chip real estate with low input/output pad count for ultra-small form factors. By avoiding the conventional open drain-based solution, the bus can be fully synthesizable. Low power is achieved by obviating a need for local oscillators in member nodes. Also, aggressive power gating allows low-power standby mode with only 53 gates powered on. An integrated wakeup scheme is compatible with a power management unit that has nW standby mode. A 3-module system including the bus is fabricated in a 180 nm process. The entire system consumes 8 nW in standby mode, and the bus achieves 17.5 pJ/bit/chip.
MBus : A Fully Synthesizable Low-power Portable Interconnect Bus for Millimeter-scale Sensor Systems
Inhee Lee,Ye-Sheng Kuo,Pat Pannuto,Gyouho Kim,Zhiyoong Foo,Ben Kempke,Seokhyeon Jeong,Yejoong Kim,Prabal Dutta,David Blaauw,Yoonmyung Lee 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.6
This paper presents a fully synthesizable low power interconnect bus for millimeter-scale wireless sensor nodes. A segmented ring bus topology minimizes the required chip real estate with low input/output pad count for ultra-small form factors. By avoiding the conventional open drain-based solution, the bus can be fully synthesizable. Low power is achieved by obviating a need for local oscillators in member nodes. Also, aggressive power gating allows low-power standby mode with only 53 gates powered on. An integrated wakeup scheme is compatible with a power management unit that has nW standby mode. A 3-module system including the bus is fabricated in a 180 nm process. The entire system consumes 8 nW in standby mode, and the bus achieves 17.5 pJ/bit/chip.