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Selective growth of individual multiwalled carbon nanotubes
Morjan, R.E.,Kabir, M.S.,Lee, S.W.,Nerushev, O.A.,Lundgren, P.,Bengtsson, S.,Park, Y.W.,Campbell, E.E.B. Elsevier 2004 Current Applied Physics Vol.4 No.6
<P><B>Abstract</B></P><P>Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.</P>
Selective growth of individual multiwalled carbon nanotubes
R.E. Morjan,M.S.Kabir,이상욱,O.A.Nerushev,P.Lundgren,S.Bengtsson,박영우,캠벨 한국물리학회 2004 Current Applied Physics Vol.4 No.6
Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the firrst time.