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Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers
Bhuiyan, Mohammad Arif Sobhan,Reaz, Mamun Bin Ibne,Badal, Md. Torikul Islam,Mukit, Md. Abdul,Kamal, Noorfazila The Korean Institute of Electrical and Electronic 2016 Transactions on Electrical and Electronic Material Vol.17 No.5
A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm<sup>2</sup> that is the lowest-ever reported chip area for this frequency band was achieved.
Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers
Mohammad Arif Sobhan Bhuiyan,Mamun Bin Ibne Reaz,Md. Torikul Islam Badal,Md. Abdul Mukit,Noorfazila Kamal 한국전기전자재료학회 2016 Transactions on Electrical and Electronic Material Vol.17 No.5
A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paperproposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS)technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, anda 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dBinsertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in thereceive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from- 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-basedresonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for theswitch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2that is the lowest-ever reported chip area for this frequency band was achieved.
Advancement of CMOS Transimpedance Amplifier for Optical Receiver
Md. Torikul Islam Badal,Mamun Bin Ibne Reaz,Lye Suet Yeng,Mohammad Arif Sobhan Bhuiyan,Fahmida Haque 한국전기전자재료학회 2019 Transactions on Electrical and Electronic Material Vol.20 No.2
Transimpedance amplifi er (TIA) is an essential component of optical receivers, and this type of amplifi er converts the photocurrent to a voltage signal. The overall performance of the optical receiver greatly depends on the performance of this component. Low-power, low-noise, and compact TIA has been realized in current development in CMOS technology. The high demands of an optical receiver has led to the optimization and development of the TIA designed specifi cations. However, the conventional CMOS TIA design is limited mainly because of its dependency on input node capacitance. In this article, the advancement of TIAs in data communication and instrumentation based on diff erent design architectures and performances is discussed. This review will serve as a comparative study and reference for designing fully integrated CMOS TIA for future optical receivers.