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V-Shaped Disposition Effect and Investor Underreaction to Earnings News
Minki Kim,Toyoung Kim,Tong Suk Kim 한국재무학회 2018 한국재무학회 학술대회 Vol.2018 No.05
We attempt to explain investor underreaction to earnings news using the newly documented refinement of the disposition effect, which is the V-shaped net selling propensity (VNSP). Using a novel data set containing stock-level information on the trading activities of different types of investors, we find that both large unrealized capital gains and losses positively predict subsequent stock returns in Korean stock markets. Furthermore, investors’ net selling propensity affects stock price drift after earnings announcements. Among good news stocks, postannouncement drift is more pronounced when they suffer from stockholders’ higher net selling propensity. Furthermore, these empirical results hold only when we construct a VNSP based on individual trading activity. Interestingly, the classic disposition effect does not induce underreaction to earnings news in our data set.
김민기(Kim, Minki),조인정(Cho, Yinjung),김윤미(Kim, Yunmi),강민관(Kang, Minkwan),이상훈(Lee, Sanghoon),김재식(Kim, Jaesig) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.11
The steady and dynamic process model for an internal reforming molten carbonate fuel cell power plant is discussed in this paper. The dominant thermal and chemical dynamic processes are modeled for the stack module and balance-of-plant, including cathode gas preparation, heat recovery, heat loss (Each heat loss amount for the stack and MBOP is obtained from real plant data) and fuel processing. Based on dynamic model and control demand, PID controllers are designed in the whole system. By applying these controllers we can obtain temperature balance of stack and control system depending on changing steam to carbon ratio, air feed amount, and transient condition.
Insecticidal Effect of Carbon dioxide(CO2) on Vegetable plug Seedling Insect in Closed Container
Minki Kim,Seokhee Park,Seunghan Kim,Sukhee Lee,Taeyoung Kwon 한국응용곤충학회 2016 한국응용곤충학회 학술대회논문집 Vol.2016 No.10
Insecticidal effect of carbon dioxide(CO2) was carried out for the environment-friendly control of insect in vegetable plug seedling greenhouse. Korean melon, pepper, tomato and strawberry were tested. Insects were performed on Myzus persicae, Tetranychus urticae, Bemisia tabaci. Plants and insect were placed in closed container and the 4 concentration(0%, 25%, 50%, 100%) injected into container and investigated plant damage and the insecticidal effect over time. Damage of korean melon was appeared in the all concentration. Pepper was not injured until the 3 hours at 50% concentration and tomato also was not injured until the 6 hours at all concentration. Strawberry was not injured all concentration. The 100% mortality of Myzus persicae was appeared over 3 hours-100%, 12 hours-50% and 24 hours-25%, Tetranychus urticae was appeared over 3 hour-100%, 12 hours-50% and 24 hours-25% and Bemisia tabaci was appeared over 6 hours-100% and 12 hour-50%.
[A Case of del(16)(q22) in a Patient with Acute Myeloid Leukemia with Complex Karyotype.]
Kim, Minki,Lee, Ji Won,Lee, Jin Kyung,Hong, Young Jun,Hong, Seok Il,Kang, Hye Jin,Cho, Eun Hae,Chang, Yoon Hwan 대한진단검사의학회 2010 Annals of Laboratory Medicine Vol.30 No.4
<P>Inversion of chromosome 16 [inv(16)(p13.1q22)] and t(16;16)(p13.1;q22) are associated with acute myelomonocytic leukemia (AMML) with eosinophilia and a favorable prognosis. On the other hand, patients with del(16)(q22) usually present with MDS or chronic myelomonocytic leukemia (CMML), which can evolve to AMML without eosinophilia, and this chromosomal aberration is associated with older age, a complex karyotype, and a poor prognosis. We report a case of AML with del(16)(q22) which showed a complex karyotype, absence of eosinophilia in bone marrow study and a poor response to chemotherapy.</P>
Kim, Minki,Seok, Ogyun,Han, Min-Koo,Ha, Min-Woo The Korean Institute of Electrical Engineers 2013 Journal of Electrical Engineering & Technology Vol.8 No.5
We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.
Minki Kim,Ogyun Seok,Min-Koo Han,Min-Woo Ha 대한전기학회 2013 Journal of Electrical Engineering & Technology Vol.8 No.5
We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 μA/mm and that of the conventional device was 1116.7 μA/mm. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.