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RISS 인기검색어
- 검색키워드
- 저자 : Kamat R. K. (검색결과 2 건)
- 무료
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- 유료
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TiO2 based nanostructured memristor for RRAM and neuromorphic applications: a simulation approach
Dongale T. D.,Patil P. J.,Desai N. K.,Chougule P. P.,Kumbhar S. M.,Waifalkar P. P.,Patil P. B.,Vhatkar R. S.,Takale M. V.,Gaikwad P. K.,Kamat R. K. 나노기술연구협의회 2016 Nano Convergence Vol.3 No.16
We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical and scripting basis. The results evidences that the piecewise linear window function can aptly simulate the memristor characteristics pertaining to RRAM application. However, the nonlinear window function could exhibit the nonlinear phenomenon in simulation only at the lower magnitude of control parameter. This has motivated us to propose a new nonlinear window function for emulating the simulation model of the memristor. Interestingly, the proposed window function is scalable up to f(x) = 1 and exhibits the nonlinear behavior at higher magnitude of control parameter. Moreover, the simulation results of proposed nonlinear window function are encouraging and reveals the smooth nonlinear change from LRS to HRS and vice versa and therefore useful for the neuromorphic applications.
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Development of Ag/WO3/ITO Thin Film Memristor Using Spray Pyrolysis Method
T. D. Dongale,S.V. Mohite,A. A. Bagade,P. K. Gaikwad,P.S. Patil,R. K. Kamat,K.Y. Rajpure 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6
The unique nonlinear relationship between charge and magnetic flux along with the pinched hysteresis loop in I-V plane provide memory with resistance combinations of attribute to Memristor which lead to their novel applications in non volatile memory, nonlinear dynamics, analog computations and neuromorphic biological systems etc. The present paper reports development of Ag/WO3/ITO thin film memristor device using spray pyrolysis method. The structural, morphological and electrical properties of the thin film memristor device are further characterized using x-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and semiconductor device analyzer. The memristor is simulated using linear dopent drift model to ascertain the theoretical and experimental conformations. For the simulation purpose, the width of doped region (w) limited to the interval [0, D] is considered as a state variable along with the window function characterized by the equation f (x) = w (1 − w). The reported memristor device exhibits the symmetric pinched hysteresis loop in I-V plane within the low operating voltage (±1 V).
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