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Fabrication of Fe:CdSe solar rechargeable (semiconductor–septum) storage cells
Pawar, S.M.,Moholkar, A.V.,Rajpure, K.Y.,Kim, J.H.,Lokhande, C.D.,Bhosale, C.H. Elsevier 2009 Current Applied Physics Vol.9 No.5
<P><B>Abstract</B></P><P>The Fe:CdSe thin films have been electrodeposited potentiostatically onto the stainless steel substrates, from non-aqueous bath containing (CH<SUB>3</SUB>COO)<SUB>2</SUB>·Cd·2H<SUB>2</SUB>O, SeO<SUB>2</SUB> and FeCl<SUB>3</SUB>. The solar rechargeable (semiconductor–septum) storage cell is fabricated with the configuration C|1M polysulphide|<I>n</I>-Fe:CdSe|stainless steel||1M FeCl<SUB>3</SUB> or 1M K<SUB>4</SUB>Fe(CN)<SUB>6</SUB>|C. The charging and discharging modes are studied and discussed. The comparison of FeCl<SUB>3</SUB> and K<SUB>4</SUB>Fe(CN)<SUB>6</SUB> based solar rechargeable storage cells, showed that FeCl<SUB>3</SUB> based storage cell is superior than that of K<SUB>4</SUB>Fe(CN)<SUB>6</SUB> based electrolyte because relatively charging time is minimum and discharging time is maximum. Thus it is concluded that the storage cell works not only as a generator but also as the storage of electricity.</P>
Fabrication of Fe:CdSe solar rechargeable (semiconductor–septum) storage cells
S.M. Pawar,A.V. Moholkar,김진혁,K.Y. Rajpure,C.D. Lokhande,C.H. Bhosale 한국물리학회 2009 Current Applied Physics Vol.9 No.5
The Fe:CdSe thin films have been electrodeposited potentiostatically onto the stainless steel substrates, from non-aqueous bath containing (CH3COO)2 Cd 2H2O, SeO2 and FeCl3. The solar rechargeable (semiconductor-septum) storage cell is fabricated with the configuration C|1 M polysulphide|n-Fe:CdSe|stainless steel||1 M FeCl3 or 1 M K4Fe(CN)6|C. The charging and discharging modes are studied and discussed. The comparison of FeCl3 and K4Fe(CN)6 based solar rechargeable storage cells, showed that FeCl3 based storage cell is superior than that of K4Fe(CN)6 based electrolyte because relatively charging time is minimum and discharging time is maximum. Thus it is concluded that the storage cell works not only as a generator but also as the storage of electricity.
R. C. Kambale,Y. A. Park,허남정,K. Y. Rajpure,S. S. Suryavanshi 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.6
Magnetostrictive-piezoelectric heterostructures show the strong magnetoelectric (ME) interactions that are mediated by mechanical forces. Magnetoelectric particulate composite structures of (0.1, 0.2, 0.3) mol% CoMn<SUB>0.2</SUB>Fe_(1.8)O_4– (0.9, 0.8, 0.7) mol% BaZr_(0.08)Ti_(0.92)O_3 has been prepared by a solid-state reaction. X-ray diffractometry patterns show variation in the amount of intensity of the spinel phase with ferrite content. The effect of constituent phase variation on the B–H hysteresis behavior and the dielectric properties was examined. The dielectric constant shows the usual dielectric dispersion behavior with increasing frequency which is due to the Maxwell–Wagner type surface interfacial polarization. The dynamic transverse ME coefficient α_(ME) of the composites has been measured at 850 Hz. The strong dependence of ME response on the content of ferrite phase was observed. The paper presents the investigations on ME composites for their dielectric, magnetic and ME properties. The results are discussed with proper scientific reasons along with the applicability of the materials in ME sensing devices.
Thin film photocatalysis for environmental remediation: A status review
R.S. Pedanekar,S.K. Shaikh,K.Y. Rajpure 한국물리학회 2020 Current Applied Physics Vol.20 No.8
This review accounts, various metal oxide and metal sulfide thin films available for photodegradation of several organic compounds. Due to difficulties in recycling and to avoid rigorous recollection of powder catalysts, the thin film catalyst are gaining rapid attention for photocatalytic applications. The semiconducting thin films are growing as promising photocatalyst for water treatment. This review focuses mainly on the photocatalytic activity of metal oxide thin films in terms of its stability, charge transport and absorption properties. Thin film photocatalyst provides the increased efficiency and cost reduction of device. Furthermore, this review summarizes some key factors regarding the enhancement in photocatalytic performance of thin films.
V.V. Ganbavle,S.V. Mohite,김진혁,K.Y. Rajpure 한국물리학회 2015 Current Applied Physics Vol.15 No.2
Sub-stoichiometric tungsten trioxide (WO3) thin films are deposited onto the glass substrates by spray pyrolysis technique using ammonium metatungstate. Effect of solution concentration on structural, morphological, optical, electrical and NO2 sensing properties of WO3 thin films is studied. Films are polycrystalline with monoclinic crystal structure and sub-stoichiometric as observed form the XRD and XPS studies, respectively. The SEM and AFM images show micro grained structure and surface roughness increases with increase in solution concentration. The PL studies revealed that the majority of the defects are the oxygen vacancies. From XPS and PL studies it is observed that, oxygen vacancies decrease with increase in solution concentration. The dielectric constant of the films as a function of frequency is in concurrence with resistivity measurements. Films show reproducible and reversible gas response at various operating temperatures and gas concentrations. Highest sensor response (38%) towards 200 ppm NO2 concentration is observed for the film with 15 mM solution concentration at moderate operating temperature (200 ℃). Pd sensitization enhanced gas response to 68% and improved kinetics of the sensor. Films are highly selective towards NO2 as compared with the various gases such as SO2, LPG, NH3 and H2S.
Synthesis of fast response, highly sensitive and selective Ni:ZnO based NO<sub>2</sub> sensor
Ganbavle, V.V.,Inamdar, S.I.,Agawane, G.L.,Kim, J.H.,Rajpure, K.Y. Elsevier 2016 CHEMICAL ENGINEERING JOURNAL -LAUSANNE- Vol.286 No.-
The use of metal oxide semiconductor (MOS) gas sensors is limited due to lack of selectivity and high operating temperature. The aim of present investigation is to enhance gas response and sensitivity of the zinc oxide (ZnO) based thin film sensor towards nitrogen dioxide (NO<SUB>2</SUB>) by Ni doping. The achieved sensitivity is around 4.2%/ppm at moderate operating temperature of 200<SUP>o</SUP>C. The gas response of 108% and 482% is observed at 200<SUP>o</SUP>C operating temperature, towards 5ppm and 100ppm NO<SUB>2</SUB>, respectively. Ni doping increased the NO<SUB>2</SUB> response and reduced the lower detection limit of NO<SUB>2</SUB> to 5ppm which is much lower than the emergency exposure limit (20ppm). The hybrid structure of nanograined rods and hexagonal flakes are observed which enhanced gas response. The gas response dependence on various physical properties and chemical composition of the sensor is also studied. The response and recovery time of 1.5 atomic percentage (at%) Ni doped ZnO thin film sensor is 11 and 123s, respectively. The response of the sensor is reproducible and it has negligible cross sensitivity for other interfering gases such as CO<SUB>2</SUB>, SO<SUB>2</SUB>, H<SUB>2</SUB>S, NH<SUB>3</SUB>, LPG, methanol, ethanol, and acetone.
Development of Ag/WO3/ITO Thin Film Memristor Using Spray Pyrolysis Method
T. D. Dongale,S.V. Mohite,A. A. Bagade,P. K. Gaikwad,P.S. Patil,R. K. Kamat,K.Y. Rajpure 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6
The unique nonlinear relationship between charge and magnetic flux along with the pinched hysteresis loop in I-V plane provide memory with resistance combinations of attribute to Memristor which lead to their novel applications in non volatile memory, nonlinear dynamics, analog computations and neuromorphic biological systems etc. The present paper reports development of Ag/WO3/ITO thin film memristor device using spray pyrolysis method. The structural, morphological and electrical properties of the thin film memristor device are further characterized using x-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and semiconductor device analyzer. The memristor is simulated using linear dopent drift model to ascertain the theoretical and experimental conformations. For the simulation purpose, the width of doped region (w) limited to the interval [0, D] is considered as a state variable along with the window function characterized by the equation f (x) = w (1 − w). The reported memristor device exhibits the symmetric pinched hysteresis loop in I-V plane within the low operating voltage (±1 V).