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유현용(Hyun-Yong Yu) 대한전기학회 2020 전기의 세계 Vol.69 No.8
최근 4차 산업 혁명에서 폭발적인 데이터양의 증가는 대용량 NAND Flash의 필요성을 크게 향상시켰다. 현재, 다수의 기업이 100단 이상의 3차원 구조개발에 성공했으며 각자의 기술을 적용해 더 나아갈 계획을 밝혔다. In the recent fourth industrial revolution, the explosive increase in data volume greatly improved the need for large-capacity NAND Flash. Currently, a number of companies have succeeded in developing more than 100-layer 3D NAND Flash, and have announced plans to go further by applying their own technologies.
Effect of Graphene oxide Interlayer on Schottky Barrier Height Reduction of Metal/n-Ge contact
Euyjin Park(박의진),Sungjoo Song(송성주),Seung-Hwan Kim(김승환),Hyun-Yong Yu(유현용) 대한전기학회 2021 대한전기학회 학술대회 논문집 Vol.2021 No.10
Schottky barrier height (SBH) reduction in metal/semiconductor (MS) contact is the foremost challenge to assure high performance in nanoelectric applications. SBH can be lowered by applying various Fermi-level (FL) unpinning techniques, such as metal/interlayer/semiconductor (MIS) contact structure. Here, we propose MIS contact structure with 2-dimensional Graphene oxide (GO) as an interlayer between metal and n-type Germanium (n-Ge). Current-voltage measurement of the GO MIS contact indicated great enhancement in reverse current density improved by 129 times compared to MS contact Consequently, significant decrease of the Schottky barrier height (SBH) from 0.605eV to 0.180eV was achieved. MIS contact with GO interlayer is, therefore, presented as an effective n-Ge based source/drain contact structure, as it can alleviate FL pinning and lower SBH which eventually lead to reduction of contact resistance.
Euy-jin Park(박의진),Min-su Kim(김민수),Hyun-Yong Yu(유현용) 대한전기학회 2021 대한전기학회 학술대회 논문집 Vol.2021 No.10
Electrochemical metallization (ECM) threshold switch has received great attention due to its simple structure and volatile resistive switching property. However, the properties of conductive filament (CF) which is formed randomly and penetrates into the inert electrode drop the reliability of ECM threshold switch. Here, we insert a 2D material, platinum diselenide (PtSe₂), for bottom electrode and ion barrier in hafnium-based ECM threshold switch. Due to the low work function and high defect formation energy of PtSe₂, Ag/HfO₂/PtSe₂/Pt device shows higher reliability than Ag/HfO₂/Pt device.