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( Hara Kang ),( Akiko Hata ) 생화학분자생물학회(구 한국생화학분자생물학회) 2015 BMB Reports Vol.48 No.6
Mesenchymal stem cells (MSCs) are multipotent stem cells capable of differentiating into adipocytes, osteoblasts, or chondrocytes. A mutually inhibitory relationship exists between osteogenic and adipogenic lineage commitment and differentiation. Such cell fate decision is regulated by several signaling pathways, including Wnt and bone morphogenetic protein (BMP). Accumulating evidence indicates that microRNAs (miRNAs) act as switches for MSCs to differentiate into either osteogenic or adipogenic lineage. Different miRNAs have been reported to regulate a master transcription factor for osteogenesis, such as Runx2, as well as molecules in the Wnt or BMP signaling pathway, and control the balance between osteoblast and adipocyte differentiation. Here, we discuss recent advancement of the cell fate decision of MSCs by miRNAs and their targets. [BMB Reports 2015; 48(6): 319-323]
Kang, Hungu,Lee, Haiwon,Kang, Youngjong,Hara, Masahiko,Noh, Jaegeun Royal Society of Chemistry 2008 Chemical communications Vol.2008 No.41
<P>Although the adsorption of benzenethiols (BT) on Au(111) usually leads to the formation of disordered phases, we demonstrate here that the displacement of preadsorbed cyclohexanethiol self-assembled monolayers (SAMs) on Au(111) by BT molecules can be a successful approach to obtain two-dimensional BT SAMs with long-range ordered domains.</P> <P>Graphic Abstract</P><P>Molecular-scale STM imaging reveals that the displacement of preadsorbed cyclohexanethiol self-assembled monolayers (SAMs) on Au(111) by benzenethiol (BT) can be a successful approach to obtain two-dimensional BT SAMs. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=b809261c'> </P>
Hara Kang,Jun Tae Jang,Jonghwa Kim,Sung-Jin Choi,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.5
Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high VGS/low VDS and low VGS/high VDS stress conditions through incorporating a forward/reverse VGS sweep and a low/high VDS readout conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high VGS/low VDS stress is applied. On the other hand, when low VGS/high VDS stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high VGS/low VDS stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low VGS/high VDS stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive VGS/VDS stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.
Kang, Hara,Jang, Jun Tae,Kim, Jonghwa,Choi, Sung-Jin,Kim, Dong Myong,Kim, Dae Hwan The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.5
Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.
중학생 다문화 청소년의 문화적응 스트레스와 외모 만족도가 학교생활적응에 미치는 영향: 자아존중감의 매개효과
강하라(Kang, Hara),노충래(Nho, Choong Rai) 한국생활과학회 2021 한국생활과학회지 Vol.30 No.1
Multicultural adolescents in Korea compose of 2% of the entire student population, with their population additionally accounting for 46.6% of the population within multicultural families. However, 16.1% of multicultural adolescents choose to drop out of school and permanently leave the Korean educational system, indicating the presence of significant difficulties in their adjustments to their schools. Using the 6th year of data in the Multicultural Adolescents Panel Study (MAPS), a survey of 1,278 middle school students, this study examines the effects of acculturative stress and physical appearance satisfaction on students’ school life adjustment, while also testing the mediating effects in the relationships. Our results show that acculturative stress and physical appearance satisfaction have direct and indirect effects via self-esteem on school life adjustment. These results indicate that self-esteem may play an important role in reducing the negative effect of acculturative stress on school life adjustment, while also enhancing the positive effect of physical appearance satisfaction on school life adjustment. Based on these results, we present future intervention strategies for schools to implement in order to improve the quality of education for students of different cultural backgrounds.