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Effects of electrode polarity on filament ruptures during unipolar resistance switchings
Jay Hyun Jo,이신범,Jonathan Hanjin Lee,장서형,채승철,정창욱 한국물리학회 2010 Current Applied Physics Vol.10 No.3
It has been argued that in unipolar resistance switching of Pt/TiO2/Pt capacitors, conducting filaments should propagate from the cathode interface, and the rupture and recovery of the filaments should occur near the anode interface [Kim et al., Appl. Phys. Lett. 91 (2007) 012907]. We investigated whether this ‘‘anode-interface localized filamentary mechanism” holds for Pt/NiO/Pt capacitors. We examined how the electrode polarity affects the rupturing of the conducting filaments in unipolar resistance switching by performing resistance switching measurements on 246 NiO capacitors. We found some dependencies on electrode polarity; however, they were not consistent with the anode-interface localized filamentary mechanism. We also found that Joule heating affects the rupturing process, suggesting that the weakest link of conducting filaments in NiO thin films plays an important role during the rupturing process.
Jihun Kim,Geonhui Lee,Hanjin Jo,Wookhyun Park,Yu Shin Jin,Ho Dong Kim,Jaehyo Kim 한국정밀공학회 2020 International Journal of Precision Engineering and Vol.21 No.12
We suggest a wearable soft robot for post-stroke, hemiplegic patients’ finger rehabilitation and quantitative evaluations on the joint paralysis. The device consists of a pair of gloves. One measures finger positions of the normal side, and the other induces symmetric movements on the affected side by pneumatic force. Ten patients at Brunnstrom stage 3 and 4 from a local hospital participated in this study. They performed Rolyan Stacking Cones 10 times with and without the support of the soft robot. We measured subjects’ proximal interphalangeal angles and air pressures in the pneumatic glove during the exercise to monitor grab/release patterns. The soft robot helped open their paralyzed finger joints by more than 50 degrees on average regardless of Brunnstrom stages. We applied pattern recognition methods on the measurement to quantitatively evaluate the subjects. A support vector machine revealed a misclassification rate of 20%, implying that there were a considerable number of overlapping data sets near the boundary between Brunnstrom stages. K-means method with three clusters suggested a new subject group near the support vector machine border. Thus, we conclude that our wearable soft robot not only provides grab/release guides to post-stroke patients but also provides quantitative information on their finger paralysis supplementary to the existing qualitative assessments.
미국 공학교육 연구 동향 : Journal of Engineering Education을 중심으로
위선복(Wee, Seonbouk),조한진(Jo, Hanjin),김동영(Kim, Dongyoung),변혜수(Byeon, Hyesoo),김태훈(Kim, Taehoon) 한국공학교육학회 2021 공학교육연구 Vol.24 No.4
The purpose of this study is to provide a direction for domestic engineering education research by analyzing the research trends of JEE(Journal of Engineering Education). The results of analyzing research trends regarding research topics, research objects and research methods are as follows. First, by research topic, ‘Diffusion of Educational Innovation’ was found to have the highest proportion with 52 articles(21%). Second, by research objects, university students showed the highest proportion with 148 articles(53.6%). Third, by research method (large category), quantitative research had the highest proportion with 132 articles(53.2%). By research method (medium category), ‘survey research’ had the highest proportion with 129 articles(33.5%). Based on the results of this study, future engineering education research should be conducted to contribute to holistic development through diversification of research topics, methods, and objects.
The fabrication of metal silicide nanodot arrays using localized ion implantation
Han, Jin,Kim, Tae-Gon,Min, Byung-Kwon,Lee, Sang Jo IOP Pub 2010 Nanotechnology Vol.21 No.48
<P>We propose a process for fabricating nanodot arrays with a pitch size of less than 25 nm. The process consists of localized ion implantation in a metal thin film on a Si wafer using a focused ion beam (FIB), followed by chemical etching. This process utilizes the etching resistivity changes of the ion beam irradiated region that result from metal silicide formation by ion implantation. To control the nanodot diameter, a threshold ion dose model is proposed using the Gaussian distribution of the ion beam intensities. The process is verified by fabricating nanodots with various diameters. The mechanism of etching resistivity is investigated via x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). </P>