http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
이신범,장서형,유향근,윤문지,양상모,강보수 한국물리학회 2012 Current Applied Physics Vol.12 No.6
We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiOx/Pt cell. For an asymmetric electrode configuration of Ti/SrTiOx/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiOx/Pt cell, O2 bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O2- ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS.
Dielectric-breakdown-like forming process in the unipolar resistance switching of Ta2O5−x thin films
윤문지,이신범,유형근,신수빈,강보수 한국물리학회 2012 Current Applied Physics Vol.12 No.3
We report unipolar resistance switching (URS) in Ta2O5-x thin films. The current increased suddenly when we applied voltages up to 5-7 V to the pristine state of Pt/Ta2O5-x/Pt, Ni/Ta2O5-x/Pt, and Ti/Ta2O5-x/Pt cells. Just after this forming process, we observed a repetitive URS occurring independently of the electrodes. We found that the required voltages for the forming process did not depend on the top electrode type, but on the film thickness. These results suggest that the forming process is driven by a dielectricbreakdown-like phenomenon, and that URS occurs due to the formation and rupture of conducting channels inside the Ta2O5-x thin film. We report unipolar resistance switching (URS) in Ta2O5-x thin films. The current increased suddenly when we applied voltages up to 5-7 V to the pristine state of Pt/Ta2O5-x/Pt, Ni/Ta2O5-x/Pt, and Ti/Ta2O5-x/Pt cells. Just after this forming process, we observed a repetitive URS occurring independently of the electrodes. We found that the required voltages for the forming process did not depend on the top electrode type, but on the film thickness. These results suggest that the forming process is driven by a dielectricbreakdown-like phenomenon, and that URS occurs due to the formation and rupture of conducting channels inside the Ta2O5-x thin film.