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Preparation and Properties of Inverse Perovskite Mn3GaN Thin Films and Heterostructures
H. Tashiro,R. Suzuki,T. Miyawaki,K. Ueda,H. Asano 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
Thin films and heterostructures of Mn3GaN with an inverse perovskite structure were grownepitaxially on SrTiO3 (001) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) (LSAT) substrates by ionbeam sputtering, and their structural and electrical properties have been investigated. Mn3GaNepitaxial thin films showed metallic behavior of temperature-dependent resistivity with a smallmaximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transitionfrom antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructuresformed by ferroelectric Ba0.7Sr0.3TiO3 and Mn3GaN layers exhibit a large magnetocapacitanceeffect of more than 2000% in an applied magnetic filed of 1.5 T.
Fahamsyah H. Latief,Koji Kakehi,Yuma Tashiro 한국공업화학회 2013 Journal of Industrial and Engineering Chemistry Vol.19 No.6
Oxidation behavior of an aluminized Ni-based single crystal superalloy CM186LC was performed between 900 8C and 1100 8C in air. The oxidation kinetics approximately followed a parabolic oxidation law at 900 8C and 1100 8C. The mass gains were significantly increased owing to the formation of u-Al2O3during initial oxidation stage. After 100 h oxidation, the mass gain rates were then decreased due to the transformation from u-Al2O3 to a-Al2O3. The microstructures after 500 h oxidation at all temperatures generally consisted of scale, coating layer, interdiffusion zone (IDZ), substrate diffusion zone (SDZ)accompanied with the topologically close-packed (TCP) and substrate.