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Yoon, Sung‐,Min,Yang, Shinhyuk,Byun, Chunwon,Park, Sang‐,Hee K.,Cho, Doo‐,Hee,Jung, Soon‐,Won,Kwon, Oh‐,Sang,Hwang, Chi‐,Sun WILEY‐VCH Verlag 2010 Advanced Functional Materials Vol.20 No.6
<P><B>Abstract</B></P>10.1002/adfm.200902095.abs<P>A fully transparent non‐volatile memory thin‐film transistor (T‐MTFT) is demonstrated. The gate stack is composed of organic ferroelectric poly(vinylidene fluoride‐trifluoroethylene) [P(VDF‐TrFE)] and oxide semiconducting Al‐Zn‐Sn‐O (AZTO) layers, in which thin Al<SUB>2</SUB>O<SUB>3</SUB> is introduced between two layers. All the fabrication processes are performed below 200 °C on the glass substrate. The transmittance of the fabricated device was more than 90% at the wavelength of 550 nm. The memory window obtained in the T‐MTFT was 7.5 V with a gate voltage sweep of −10 to 10 V, and it was still 1.8 V even with a lower voltage sweep of −6 to 6 V. The field‐effect mobility, subthreshold swing, on/off ratio, and gate leakage currents were obtained to be 32.2 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>, 0.45 V decade<SUP>−1</SUP>, 10<SUP>8</SUP>, and 10<SUP>−13</SUP> A, respectively. All these characteristics correspond to the best performances among all types of non‐volatile memory transistors reported so far, although the programming speed and retention time should be more improved.</P>
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
CHO, Doo-Hee,PARK, Sang-Hee Ko,YANG, Shinhyuk,BYUN, Chunwon,RYU, Min Ki,LEE, Jeong-Ik,HWANG, Chi-Sun,YOON, Sung Min,CHU, Hye Yong,CHO, Kyoung Ik The Institute of Electronics, Information and Comm 2009 IEICE transactions on electronics Vol.92 No.11
<P>We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO<SUB>2</SUB> content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO<SUB>2</SUB>) exhibited a mobility of 10.3cm<SUP>2</SUP>/Vs, a turn-on voltage of 0.4V, a sub-threshold swing of 0.6V/dec, and an on/off ratio of 10<SUP>9</SUP>. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.</P>
Seung-Hyuck Lee,Jongbin Kim,Seong Ho Yoon,Kyeong-Ah Kim,Sung-Min Yoon,Chunwon Byun,Chi-Sun Hwang,Gi Heon Kim,Kyoung-Ik Cho,Seung-Woo Lee IEEE 2015 IEEE electron device letters Vol.36 No.6
<P>A new pixel architecture and driving scheme for a low-power liquid crystal display (LCD) with a low refresh-rate is proposed. The proposed pixel architecture comprises two oxide thin-film transistors (Ox-TFTs), two ferroelectric memory TFTs (Fe-MTFTs), and two capacitors. Both TFTs have the same indium gallium zinc oxide film as an active layer. The Fe-MTFT exhibits a hysteresis property owing to the ferroelectric gate insulator that enables it to operate as a memory. A prototype LCD with 6 × 5 pixels is fabricated in this letter. The fieldeffect mobility of Ox-TFTs is 11 cm<SUP>2</SUP>V<SUP>-1</SUP>s<SUP>-1</SUP>. The memory window of Fe-MTFT is 5 V with a gate-voltage sweep from -20 to 20 V. After programming the Fe-MTFTs, the fabricated LCD successfully operates at a 0.5-Hz refresh-rate.</P>
Park, Sang‐,Hee K.,Hwang, Chi‐,Sun,Ryu, Minki,Yang, Shinhyuk,Byun, Chunwon,Shin, Jaeheon,Lee, Jeong‐,Ik,Lee, Kimoon,Oh, Min Suk,Im, Seongil WILEY‐VCH Verlag 2009 ADVANCED MATERIALS Vol.21 No.6
<P><B>Transparent ZnO thin‐film transistors (TFTs)</B> with a defect‐controlled channel and channel/dielectric interface maintain good photo‐stability during device operation. The figure shows a cross‐sectional view of a top‐gate ZnO‐based transparent TFT/storage capacitor cell structure, connected to front‐panel organic‐light‐emitting‐diode pixels to operate in bottom emission mode. </P>
박상희(Sang-Hee Park),황치선(Chi-Sun Hwang),조경익(Kyoung Ik Cho),유민기(Minki Ryu),윤성민(Sung Min Yoon),변춘원(Chunwon Byun),양신혁(Shinhyuk Yang) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
We introduce transparent AM-OLED driven by oxide thin film transistor (TFT). To embody viable transparent AM-OLED, we have to achieve highly stable oxide TFT with high transparency. The photo-stability and bias stability of oxide TFT were investigated under constant gate bias and constant current (CC) stress to explore the possibility of transparent AM-OLED application. We present 3.2” QVGA transparent AM-OLED.