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Alhammadi, S.,Moon, K.,Park, H.,Kim, W.K. Elsevier Sequoia 2017 THIN SOLID FILMS - Vol.625 No.-
Thin films of cadmium sulfide (CdS) have been prepared on soda-lime glass, Mo-coated glass, and Cu(InGa)Se<SUB>2</SUB> (CIGS) thin films by a chemical bath deposition (CBD) technique using three different cadmium (Cd) sources: cadmium sulfate (CdSO<SUB>4</SUB>), cadmium acetate (CdAc<SUB>2</SUB>), and cadmium chloride (CdCl<SUB>2</SUB>). Among the three cadmium salts, CdCl<SUB>2</SUB>, which forms the most stable Cd-anion complex, produced the thinnest CdS films, presumably due to the slow release of Cd ions. Considering the different growth rates of the three Cd salts, CdS films with a thickness of approximately 70nm were deposited on the CIGS absorber for the subsequent fabrication of devices with a glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al structure. The CIGS/CdS samples were annealed at temperatures in the range of 100-200<SUP>o</SUP>C. It was found that the optimum annealing temperature for the best cell performance was around 150<SUP>o</SUP>C and that the short circuit current density (J<SUB>SC</SUB>) was mainly improved due to the enhanced light absorption after thermal annealing. However, annealing at 200<SUP>o</SUP>C resulted in the damage of the CIGS/CdS junction, as evidenced by the reduction of the open-circuit voltage and fill factor without a significant change in J<SUB>SC</SUB>. At the optimum annealing temperature (150<SUP>o</SUP>C), CdCl<SUB>2</SUB> yielded the highest CIGS cell efficiency (9.96%), followed by CdAc<SUB>2</SUB> (9.60%) and CdSO<SUB>4</SUB> (9.09%).
Alhammadi, Salh,Jung, Hyunmin,Kwon, Sunmo,Park, Hyeonwook,Shim, Jae-Jin,Cho, Moo Hwan,Lee, Moonyong,Kim, Jong Su,Kim, Woo Kyoung Elsevier 2018 THIN SOLID FILMS - Vol.660 No.-
<P><B>Abstract</B></P> <P>The effect of Gallium (Ga) doping on CdS thin film properties and the performance of the corresponding Cu(InGa)Se<SUB>2</SUB>/CdS heterojunction solar cell has been investigated. The CdS thin films were deposited using a conventional chemical bath deposition (CBD) process. For a source of Ga dopant, a gallium nitrate (Ga(NO<SUB>3</SUB>)<SUB>3</SUB>) aqueous solution with Ga concentration from 5×10<SUP>−4</SUP> to 2×10<SUP>−3</SUP> M has been used. Ga doping was carried out by adding gallium nitrate aqueous solution directly to the main CBD solution that contained all the other reactants (i.e., Cd<SUP>2+</SUP>, S<SUP>2−</SUP>, and NH<SUB>3</SUB>). It was found that Ga doping is effective for improving the optical transmittance of CdS films and, thus, increasing the photoelectric current density of the films and the short-circuit current density (J<SUB>SC</SUB>) of CIGS cells. With the use of a Ga-doped CdS buffer layer, the photovoltaic performance of CIGS cells was improved, primarily because of enhanced J<SUB>SC</SUB> and fill factor.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Ga doping of CdS was carried out by chemical bath deposition solution. </LI> <LI> Ga doping improved the optical transmittance and photoelectric current of CdS film. </LI> <LI> CdS:Ga buffer layer enhanced the J<SUB>SC</SUB> and fill factor of Cu(InGa)Se<SUB>2</SUB> cell. </LI> </UL> </P>
Intelligent coordinated self-optimizing handover scheme for 4G/5G heterogeneous networks
Abdulraqeb Alhammadi,Wan Haslina Hassan,Ayman A. El-Saleh,Ibraheem Shayea,Hafizal Mohamad,Wasan Kadhim Saad 한국통신학회 2023 ICT Express Vol.9 No.2
Estimating the location of a target in search-and-rescue operations is quite challenging when the target is not responding. Therefore, in this paper, we investigate the passive target localization problem using mobile unmanned aerial vehicles (UAVs), where multiple mobile UAVs receive the time-difference-of-arrival (TDOA) measurements from the source UAV. Unlike traditional TDOA for static UAVs, the problem becomes more challenging when considering the mobility of UAVs. Therefore, we propose a novel TDOA model for target localization with mobile UAVs. We also measure the performance limit inequality between its Cramer-Rao lower bound (CRLB) and the mean-squared error (MSE).