http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Alhammadi, Salh,Jung, Hyunmin,Kwon, Sunmo,Park, Hyeonwook,Shim, Jae-Jin,Cho, Moo Hwan,Lee, Moonyong,Kim, Jong Su,Kim, Woo Kyoung Elsevier 2018 THIN SOLID FILMS - Vol.660 No.-
<P><B>Abstract</B></P> <P>The effect of Gallium (Ga) doping on CdS thin film properties and the performance of the corresponding Cu(InGa)Se<SUB>2</SUB>/CdS heterojunction solar cell has been investigated. The CdS thin films were deposited using a conventional chemical bath deposition (CBD) process. For a source of Ga dopant, a gallium nitrate (Ga(NO<SUB>3</SUB>)<SUB>3</SUB>) aqueous solution with Ga concentration from 5×10<SUP>−4</SUP> to 2×10<SUP>−3</SUP> M has been used. Ga doping was carried out by adding gallium nitrate aqueous solution directly to the main CBD solution that contained all the other reactants (i.e., Cd<SUP>2+</SUP>, S<SUP>2−</SUP>, and NH<SUB>3</SUB>). It was found that Ga doping is effective for improving the optical transmittance of CdS films and, thus, increasing the photoelectric current density of the films and the short-circuit current density (J<SUB>SC</SUB>) of CIGS cells. With the use of a Ga-doped CdS buffer layer, the photovoltaic performance of CIGS cells was improved, primarily because of enhanced J<SUB>SC</SUB> and fill factor.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Ga doping of CdS was carried out by chemical bath deposition solution. </LI> <LI> Ga doping improved the optical transmittance and photoelectric current of CdS film. </LI> <LI> CdS:Ga buffer layer enhanced the J<SUB>SC</SUB> and fill factor of Cu(InGa)Se<SUB>2</SUB> cell. </LI> </UL> </P>
Nd-Doped SnO<sub>2</sub> and ZnO for Application in Cu(InGa)Se<sub>2</sub> Solar Cells
Park, Hyeonwook,Alhammadi, Salh,Bouras, Karima,Schmerber, Guy,Ferblantier, Gé,rald,Dinia, Aziz,Slaoui, Abdelilah,Jeon, Chan-Wook,Park, Chinho,Kim, Woo Kyoung American Scientific Publishers 2017 Science Of Advanced Materials Vol.9 No.12