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실리콘 기판 위에 제작된 나노 크기의 구조물을 가진 그루브 표면이 이방성 젖음에 미치는 영향
이동기(Dong-Ki Lee),조영학(Younghak Cho) 한국생산제조학회 2013 한국생산제조학회지 Vol.22 No.3-1
A grooved surface with anisotropic wettability was fabricated on a silicon substrate using photolithography, reactive ion etching, and a KOH etching process. The contact angles (CAs) of water droplets were measured and compared with the theoretical values in the Cassie state and Wenzel state. The experimental results showed that the contact area between a water droplet and a solid surface was important to determine the wettability of the water. The specimens with native oxide layers presented CAs ranging from 71.6° to 86.4° The droplets on the specimens with a native oxide layer could be in the Cassie state because they had relatively smooth surfaces. However, the CAs of the specimens with thick oxide layers ranged from 33.4° to 59.1°. This indicated that the surface roughness for a specimen with a relatively thick oxide layer was higher, and the water droplet was in the Wenzel state. From the CA measurement results, it was observed that the wetting on the grooved surface was anisotropic for all of the specimens.
Top-down 방식으로 제작한 실리콘 나노와이어 ISFET 의 전기적 특성
김성만(Sungman Kim),조영학(Younghak Cho),이준형(Junhyung Lee),노지형(Jihyoung Rho),이대성(Daesung Lee) Korean Society for Precision Engineering 2013 한국정밀공학회지 Vol.30 No.1
Si Nanowire (Si-NW) arrays were fabricated by top-down method. A relatively simple method is suggested to fabricate suspended silicon nanowire arrays. This method allows for the production of suspended silicon nanowire arrays using anisotropic wet etching and conventional MEMS method of SOI (Silicon-On-Insulator) wafer. The dimensions of the fabricated nanowire arrays with the proposed method were evaluated and their effects on the Field Effect Transistor (FET) characteristics were discussed. Current-voltage (I-V) characteristics of the device with nanowire arrays were measured using a probe station and a semiconductor analyzer. The electrical properties of the device were characterized through leakage current, dielectric property, and threshold voltage. The results implied that the electrical characteristics of the fabricated device show the potential of being ion-selective field effect transistors (ISFETs) sensors.
전사방법을 이용한 폴리머 필름에 내재된 실리콘 나노구조물 어레이 제작
신호철(Hocheol Shin),이동기(Dong-Ki Lee),조영학(Younghak Cho) 한국생산제조학회 2016 한국생산제조학회지 Vol.25 No.1
This paper presents a silicon nanostructure array embedded in a polymer film. The silicon nanostructure array was fabricated by using basic microelectromechanical systems (MEMS) processes such as photolithography, reactive ion etching, and anisotropic KOH wet etching. The fabricated silicon nanostructure array was transferred into polymer substrates such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), and polycarbonate (PC) through the hot-embossing process. In order to determine the transfer conditions under which the silicon nanostructures do not fracture, hot-embossing experiments were performed at various temperatures, pressures, and pressing times. Transfer was successfully achieved with a pressure of 1 MPa and a temperature higher than the transition temperature for the three types of polymer substrates. The transferred silicon nanostructure array was electrically evaluated through measurements with a semiconductor parameter analyzer (SPA).