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김영석,김준곤,홍완,김덕경,조수영,우형주,김낙배,Kim, Y. S.,Kim, J. M.,Hong, W.,Kim, D. K.,Cho, S. Y.,Woo, H. J.,Kim, N. B. 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.4
Hydrogen depth profiling was performed by H(19F, $\alpha$${\gamma}$) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The ${\gamma}$ rays produced by the reaction were measure dby 3" $\times$3" and 6" $\times$8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.