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Hot Wall Epitaxy(HWE)법에 의한 BaIn2Se4 에피레어 성장과 가전자대 갈라짐에 대한 광전류 연구
정준우 ( Jun Woo Jeong ),이기정 ( Ki Jeong Lee ),정경아 ( Kyung A Jeong ),홍광준 ( Kwang Joon Hong ) 한국센서학회 2014 센서학회지 Vol.23 No.2
A stoichiometric mixture of evaporating materials for BaIn2Se4 epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, BaIn2Se4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 620oC and 400oC, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of BaIn2Se4 epilayers measured from Hall effect by van der Pauw method are 8.94×1017 cm-3 and 343 cm2/vs at 293 K, respectively. The temperature dependence of the energy band gap of the BaIn2Se4 obtained from the absorption spectra was well described by the Varshni`s relation, Eg(T)=2.6261 eV-(4.9825×10-3 eV/K)T2/(T+558 K). The crystal field and the spin-orbit splitting energies for the valence band of the BaIn2Se4 have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the states of the valence band of the BaIn2Se4/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the A1-, B1-exciton for n = 1 and C21-exciton peaks for n=21.
정준우(Jun-Woo Jeong),이태진(Tae-Jin Lee),문철희(Cheol-Hee Moon) 호서대학교 공업기술연구소 2020 공업기술연구 논문집 Vol.39 No.1
OLED 용액공정에서 핵심 기술인 전극형성을 위하여 갈륨-인듐계 합금을 이용한 용액공정을 진행하였다. 코팅방법에 있어서는 열증착, 스프레이 코팅을 비교하였고 갈인 금속의 조성을 변경하여 상온에서 안정적인 전극이 얻어지도록 하였다. 코팅된 전극에 대하여 면저항과 접촉저항을 평가하여 하부 유기물과 전기적인 접촉 특성이 양호할 것으로 평가되는 금속 전극을 용액공정으로 제작하였다. We developed an electrode technology for solutuion processed OLED manufacturing. thermal evaporation and spray coating were compared as a printing method and compostion of the Ga-In alloy was changed to get a stable condition for the process at room temperature. Surface resistance and contact resistance were measured to examine the possibility of getting a stable contact property between the electrode and the lower organic layers.