http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
강혁진(H. J. Kang),안성훈(S. H. Ahn),김경동(K. D. Kim),이재상(J. S. Lee),이재형(J. H. Lee) 한국정밀공학회 2004 한국정밀공학회 학술발표대회 논문집 Vol.2004 No.10월
The research on surface modification technology has been advanced to change the properties of engineering material. Ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electronic properties of mechanical parts. In this research, nitrogen ions are implanted into aluminum for mold to improve endurance and life span. To analyze modification of surface properties, micro hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than untreated specimen and friction coefficient was also improved. In this experiment, it can be expected that nitrogen ion implantation can contribute to enhance the mechanical properties of material and ion implantation technology may also be applied to other materials.
GaN 성장을 위한 기판의 Ion Implantation 전처리에 관한 연구
이재석,진정근,변동진,이재상,이재형,고의관,Lee J.,Jhin J.,Byun D.,Lee J. S.,Lee J. H.,Koh W-K. 한국재료학회 2004 한국재료학회지 Vol.14 No.7
The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.
金知植,李在祥,周雄龍 대한금속재료학회 2002 대한금속·재료학회지 Vol.40 No.4
A study has been made to investigate the effects of various oxide particles on the nucleation and growth during strain induced dynamic transformation(SIDT) in Ti and Mg added steels. Compression tests have been carried out for steels with fine(20 ㎛), medium(90 ㎛) and coarse austenite(200 ㎛) microstructures at 750, 700 and 650℃ at a strain rate of 1s^-1. After the tests, specimens were water quenched and analyzed by OM, SEM and TEM. The results showed that the ferrite nucleation during SIDT was enhanced by Ti and Mg oxide particles as well as prior austenite boundaries via providing nucleation sites. On the other hand, the growth rate of ferrite formed by SIDT seemed to be more closely related with carbon in steel.