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원자층 증착을 이용한 고 유전율 Al<sub>2</sub>O<sub>3</sub> 절연 박막 기반 Indium Zinc 산화물 트랜지스터의 저전압 구동
엄주송,김성진,Eom, Ju-Song,Kim, Sung-Jin 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.7
IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.
급속열처리 기술을 이용한 rutile 구조를 가지는 TiO2-X/TiO2 기반의 저전압 저항 스위칭 메모리에 관한 연구
허관준 ( Kwan Jun Heo ),엄주송 ( Ju Song Eom ),김성진 ( Sung Jin Kim ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.9
The resistive switching properties driven by low voltage in a nano-scale resistiverandom- access-memory device composed of Al(top)/TiO2-X/TiO2/Al(bottom) were investigated in this paper. TiO2-X and TiO2 layers were deposited by the atomic layer deposition method and a TiO2-X layer was added during the process of rapid-thermal-annealing at 600 °C to induce oxygen vacancies. Structural analyses by using X-ray diffraction suggested that the TiO2-X film annealed at this temperature changes from an amorphous to a rutile phase. The oxygen vacancies of the TiO2-X region acted as traps for electrons and led to memory behavior. The device exhibited resistive-random-access-memory behavior consistent with resistive switching properties such as a high current on/off ratio greater than 1000:1, low-voltage driving less of han 0.5 V, and nonvolatility for over 1.0 × 105s.
용액 공정 기반의 인듐 아연 산화물 트랜지스터의 PMMA 보호막 여부에 따른 신뢰성 평가
허관준 ( Kwan Jun Heo ),엄주송 ( Ju Song Eom ),조현아 ( Hyeonah Jo ),최성곤 ( Seong Gon Choi ),정병준 ( Byung Jun Jung ),김성진 ( Sung Jin Kim ) 대한금속재료학회(구 대한금속학회) 2016 대한금속·재료학회지 Vol.54 No.4
We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage current. Moreover, the potential to safely manipulate IZO-TFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter.