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신규 합성 전구체를 이용한 원자층 증착법 기반 텅스텐 박막의 성장 메커니즘 및 박막 물성 비교 연구
이유진(Yujin Lee),서승기(Seunggi Seo),남태욱(Taewook Nam),이현호(Hyunho Lee),윤휘(Hwi Yoon),선상규(Sangkyu Sun),오일권(Il-Kwon Oh),이상훈(Sanghun Lee),서진형(Jin Hyung Seo),석장현(Jang Hyeon Seok),김형준(Hyungjun Kim) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
Tungsten (W) has a wide range of industrial applications since it has several advantages such as high conductivity, thermal stability, and electromigration durability. We report the properties of plasma-enhanced atomic-layer-deposited (ALD) tungsten (W) thin films. ALD is promising deposition method for obtaining thin films with good conformality, good uniformity, and low impurity contamination, as its growth mechanism is entirely based on self-limited surface reaction. Thus, the choice of an appropriate precursor for ALD is critical for obtaining high-quality films. We comparatively investigate the growth characteristics and film properties using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(Ⅴ) tricarbonyl hydride (HEtCpW(CO)₃), and Ar/H₂ plasma as the reactant. Growth characteristics and film properties were significantly affected by ligands of precursors. These results provide fundamental and useful information, with respect to the selection of the suitable precursor, for practical implementation of device fabrication.