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라디칼 빔 보조 분자선 증착법 (Radical Beam Assisted Molecular Beam Epitaxy) 법에 의해 성장된 ZnO 박막의 발광 특성에 관한 연구
서효원,변동진,최원국,Suh, Hyo-Won,Byun, Dong-jin,Choi, Won-Kook 한국재료학회 2003 한국재료학회지 Vol.13 No.6
II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.
유전체장벽방전에 의한 질소함유 활성종의 개발 및 저온 GaN 박막 성장
김주성,변동진,김진상,금동화,Kim, Joo-Sung,Byun, Dong-Jin,Kim, Jin-Sang,Kum, Dong-Wha 한국재료학회 1999 한국재료학회지 Vol.9 No.12
TMGa와 유전체 장벽방전에 기초한 질소함유 활성종을 이용하여 (0001) 사파이어 기판위에 GaN 박막을 저온에서 성장시켰다. III-V 질소화합물 반도체의 에피막 성장에 있어서 암모니아는 유기금속 화학증착법에서 지금까지 알려진 가장 보편적인 질소 공급원이며 충분한 질소공급을 위해 $1000^{\circ}C$ 이상의 고온 성장이 필수적이다. GaN 박막을 비교적 저온에서 성장시키기 위하여 질소 공급원으로 암모니아 대신 유전체 장벽방전을 이용하였다. 유전체 장벽방전은 전극사이에 유전체 장벽을 설치하여 arc를 조절하는 방전이며 수 기압의 높은 공정압력보다 훨씬 높으므로 기판표면까지 전달하는데도 이점이 있다. GaN 박막의 결정성과 표면형상은 성장온도, 완충층에 따라 변화하였으며, $700^{\circ}C$의 저온에서도 우수한 (0001) 배향성을 갖는 GaN 박막을 성장할 수 있었다. GaN films were deposited on sapphire [$Al_2O_3(0001)$] substrates at relatively low temperature by MOCVD using N-atom source based on a Dielectric Barrier Discharged method. Ammonia gas($NH_3$is commonly used as an N-source to grow GaN films in conventional MOCVD process, and heating to high temperature is required to provide sufficient dissociation of $NH_3$. We used a dielectric barrier discharge method instead of $NH_3$ to grow GaN film relatively low temperature. DBD is a type of discharge, which have at least one dielectric material as a barrier between electrode. DBD is a type of controlled microarc that can be operated at relatively high gas pressure. Crystallinity and surface morphology depend on growth temperature and buffer layer growth. With the DBD-MOCVD method, wurtzite GaN which is dominated by the (0001) reflection was successfully grown on sapphire substrate even at $700^{\circ}C$.
Spray Pyrolysis에 의한 Manganese Oxide 입자의 제조 및 전기화학적 특성
최원창,변동진,이중기,박달근,김현중,Choi, Won-Chang,Byun, Dong-Jin,Lee, Jung-Kee,Park, Dal-Keun,Kim, Hyeon-Joong 한국재료학회 2001 한국재료학회지 Vol.11 No.11
Spray pyrolysis is a favorable technique to form complex mixed-metal oxide powders with high purity in high temperature region. Manganese oxide powders were prepared by spray pyrolysis from an aqueous solution of $Mn(NO_3)_2$. Powders were formed in the temperature range of 500~$700^{\circ}C$ under the constant pressure of 300torr. All the powders have hydrous forms. When the temperature was increased, the size and the surface area of the particles decreased. An electrochemical capacitors were made with manganese oxide electrodes and KOH electrolyte. With the temperature decreased, capacitors showed high capacitance. Capacitor which was prepared with powders formed in the temperature $500^{\circ}C$ demonstrated specific capacitances as high as 83F/g.
노대호,김재수,변동진,양재웅,김나리,Rho, Dae-Ho,Kim, Jae-Soo,Byun, Dong-Jin,Yang, Jae-Woong,Kim, Na-Ri 한국재료학회 2003 한국재료학회지 Vol.13 No.6
SiC nanorods have been grown on Si (100) substrate directly. Tetramethylsilane and Ni were used for SiC nanorod growth. After 3minute, SiC nanorod had grown by CVD. Growth regions ware divided by two regions with diameter. The First region consisted of thin SiC nanorods having below 10 nm diameter, but second region's diameter was 10∼50 nm. This appearance shows by reduction of growth rate. The effect of temperature and growth time was investigated by scanning electron microscopy. Growth temperature and time affected nanorod's diameter and morphology. With increasing growth time, nanorod's diameter increased because of the deactivation effect. But growth temperatures affected little. By TEM characterization, grown SiC nanorods consisted of the polycrystalline grain.
CNT-confined reaction에 의한 탄화규소 나노튜브의 합성
노대호,김재수,변동진,양재웅,김나리,Rho Dae-Ho,Kim Jae-Soo,Byun Dong-Jin,Yang Jae-Woong,Kim Na-Ri 한국재료학회 2004 한국재료학회지 Vol.14 No.3
SiC nanotubes were synthesized by CNT-confined reaction. Evaporated SiO gas reacted with carbon nanotubes by VS growth mechanism. By confineded reaction, carbon nanotube was changed to SiC nanotube, and synthesized SiC nanotube was filled partly by the gas reaction in the nanotubes. SiC nanotube's mean diameters were not changed than carbon nanotubes because of means ratio of $CO_2$ and SiO gas was maintained evenly during the process. This result was same of data of simulation. By TEM observastion, SiC nanotube was filled by reaction of inner wall of CNT and SiO gas through the VS reactions. Converted SiC nanotube's compositions were revealed Si and C of 1: 1 ratios at all sites of nanotube by EDS.
MOCVD법과 MOD법으로 제작된 Ta<sub>2</sub>O<sub>5</sub> 박막의 열처리 온도에 따른 유전특성연구
강필규,진정근,변동진,배재준,남산,Kang, Pil-Kyu,Jhin, Jung-geun,Byun, Dong-jin,Bae, Jae-jun,Nahm, Sahn 한국재료학회 2003 한국재료학회지 Vol.13 No.12
To explore the annealing temperature dependence of dielectric properties $Ta_2$$O_{5}$ thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The $Ta_2$$O_{5}$thin films fabricated MOCVD and MOD were annealed in $O_2$at temperature between 600 and 90$0^{\circ}C$. The measured dielectric constant of both films at 100 KHz was the highest value at $650^{\circ}C$ and decreased with increasing annealing temperature above $650^{\circ}C$. Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.
금속 코팅된 흑연 입자로 제조된 전극의 전기화학적 특성
최원창,이중기,변동진,조병원,Choi, Won-Chang,Lee, Joong-Kee,Byun, Dong-Jin,Cho, Byung-Won 한국전기화학회 2003 한국전기화학회지 Vol.6 No.2
리튬이차전지 음극활물질로 사용되는 합성흑연입자에 여러종류금속을 코팅하여 그 전기화학적특성을 조사하였으며, 구체적인 코팅방법으로는 가스분산스프레이 코팅법을 적용하였다. 본 연구범위내에서 금속을 코팅한 입자로 제조된 전극은 충방전시 형성되는 계면저항을 감소시킴으로서 결과적으로 원시료에 비해서 높은 방전용량을 나타내었다. CV실험을 통해서 은과 주석은 리튬과의 합금반응을 확인할 수 있었으나, 2.5 중량$\%$ 이하의 낮은 코팅량을 고려했을 때, 높은 분산도를 지닌 금속 물질의 코팅을 통한 전극 활물질 표면의 균일한 전도도의 증가가 주요원인인 것으로 사료되었다. 단일계 금속으로 코팅하였을 경우 은코팅한 전극활물질이 가장 높은 방전용량과 사이클특성을 나타내었고, 은을 기본으로 하는 이성분계에서는 은-니켈전극이 가장 높은 고율특성을 나타내었다. Various kinds of metals were coated on synthetic graphite in order to investigate the relationship between film characteristics and their electrochemical performance. Gas suspension spray coating method was employed for the coating of synthetic graphite. In our experimental range, all of the metal coated synthetic graphite showed the higher capacity than that of raw material at high C-rate mainly due to decrease in impedance of passivation film. In cyclic voltammetry experiments, silver-coated and tin-coated graphite anodes found the lithium-alloy reaction. Considering smaller amount of metal coating, the most increase in discharge capacity was caused by improvement of conductivity of the electrode. When single-component metal was coated, silver-coated graphite anode exhibited the highest discharge capacity and better cycleability. Double components of silver-nickel coated active material showed the highest discharge capacity, rate capability and the best cycle performance in the range of our experiments.
노대호,김재수,변동진,이재훈,양재웅,김나리,조성일,Rho Dae-Ho,Kim Jae-Soo,Byun Dong-Jin,Lee Jae-Hoon,Yang Jae-Woong,Kim Na-Ri,Cho Sung-Il 한국재료학회 2004 한국재료학회지 Vol.14 No.7
$SiO_2$ nanowires were synthesized using the vapor evaporation method. Grown nanowires had a different shapes by kind of substrates. Diameters and lengths of the nanowires increased with increasing growth temperature and time. Mean diameters and lengths of $SiO_2$ nanowire were different by kind of substrates. These variations were attributed to nanowire densities on the substrates. The kind of substrates affected microstructure and PL properties of grown nanowires. In case of $Al_{2}O_3$ and quartz substrates, additional $O_2$ were supported during growth stages, and made a nucleation site. Therefore relative narrow nanowire was grown on $Al_{2}O_3$ and quartz substrates. Optical property were measured by photoluminescence spectroscopy. Relatively broad peak was obtained and mean peak positioned at 450 and 420nm. however in case of quartz substrates, mean peak positioned at 370nm. These peak shift was contributed to the size and substrate effects.
김나리,김재수,변동진,노대호,양재웅,Kim, Na-Ri,Kim, Jae-Soo,Byun, Dong-Jin,Rho, Dae-Ho,Yang, Jae-Woong 한국재료학회 2003 한국재료학회지 Vol.13 No.10
The ZnO nanorods were synthesized using vapor-solid (VS) method on sodalime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of Zn powder at $500^{\circ}C$. As-fabricated ZnO nanorods had an average diameter and length of 85 nm and 1.7 $\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380 nm and a green emission at around 500 nm.
기상휘발법에 의한 이산화규소 나노와이어의 성장에 미치는 가스의 영향
노대호,김재수,변동진,이재훈,양재웅,김나리,Rho Dae-Ho,Kim Jae-Soo,Byun Dong-Jin,Lee Jae-Hoon,Yang Jae-Woong,Kim Na-Ri 한국재료학회 2005 한국재료학회지 Vol.15 No.5
Effects of gases to growth of $SiO_2$ nanowires were characterized. $N_2$, Ar, and $O_2$ gas's effect were determined. $SiO_2$ nanowires growth scheme was varied by kind and flow rates of gases because of amounts of $O_2$. Flow rates of gases and kind of substrates affected nanowires' diameters, lengths and morphologies of grown nano wires. With increasing flow rates of gases, nanowire's diameter increased because of additional VS and SLS reactions. By TEM characterization, We knows that, grown $SiO_2$ nanowires on Si substrate showed two shell structures. These shapes of nanowires were formed by reaction of additional SLS growth. Grown $SiO_2$ nanowires showed blue luminescence by PL characterization These Blue luminescence was due to quantum confinement effect and oxygen vacancies in the nanowires.