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김영석,김낙배,정기형,박혜일,Kim, Y.S.,Kim, N.B.,Chung, K.H.,Bak, H.I. Korean Nuclear Society 1986 Nuclear Engineering and Technology Vol.18 No.2
The $^{93}Nb(n,n\alpha)^{89m}Y$, $^{93}Nb(n,{\alpha})^{90m}Y$ and $^{93}Nb(n,2n)^{92m}Nb$ cross sections at a neutron energy of 14.6 MeV have been measured relative to the $^{27}Al(n,p)^{27}Mg$ and $^{27}Al(n,{\alpha})^{24}Na$ cross sections. A small accelerator utilizing $T(D,n)^4He$ reaction was used as a neutron source and the neutron energy spread is about 0.4MeV at the sample. All induced activities were measured with a 70cc HPGe detector in the same geometry.
김영석,김준곤,홍완,김덕경,조수영,우형주,김낙배,Kim, Y. S.,Kim, J. M.,Hong, W.,Kim, D. K.,Cho, S. Y.,Woo, H. J.,Kim, N. B. 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.4
Hydrogen depth profiling was performed by H(19F, $\alpha$${\gamma}$) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The ${\gamma}$ rays produced by the reaction were measure dby 3" $\times$3" and 6" $\times$8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.
An ERD-TOF System for the Depth Profiling of Light Elements
김영석,우형주,김준곤,김덕경,최한우,홍완,Kim, Y. S.,Woo, H. J.,Kim, J. K.,Kim, D. K.,Choi, H. W.,Hong, W. The Korean Vacuum Society 1996 Applied Science and Convergence Technology Vol.5 No.1
An ERD-TOF system is constructed for the nondestructive depth profiling of light elements in thin films in the range of several thousand angstroms. The particles, recoiled by 10 $MeV^{35}Cl$ projectiles, were detected by a Time-Of-Flight spectrometer composed of a MCP (Micro Channel Plate) and a SSB (Silicon Surface Barrier) detector. A two parameter data acquisition system composed of two PC's was constructed for registering simultaneous time and energy signals. A $Si_3N_4$/poly-Si/$SiO_2$/Si sample was anlayzed and the result is compared with RBS. The detection limit, maximum probable depth and depth resolution for light elements in silicon are about $4\times10^{14}atoms/\textrm{cm}^2$, 5, 000$\AA$ and 100$\AA$, respectively.
김영석(Y.S.Kim),박기철(K.C.Park),김상주(S.J.Kim) 한국자동차공학회 1996 한국자동차공학회 춘 추계 학술대회 논문집 Vol.1996 No.11_1
Boundry element method for 2-dimsional potential problem was used to design of optimum blank shapes for irregular press forming. Material flow at blank holder was asuumed to potential flow. If blank is controlled only by blankhoder, blank shape for optimal drawing was found even though punch profile was complex.<br/> <br/>