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고전압 전력소자를 보호하기 위한 Sense FET 설계방법
경신수,서준호,김요한,이종석,강이구,성만영,Kyoung, Sin-Su,Seo, Jun-Ho,Kim, Yo-Han,Lee, Jong-Seok,Kang, Ey-Goo,Sung, Man-Young 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1
Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper, we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450 V power MOSFET by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5{\times}10^{14}cm^{-3}$, size of $600{\um}m^2$ with $4.5\;{\Omega}$, and off-state leakage current below $50{\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods are meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.
습식 산화를 이용한 원형 트렌치 게이트 IGBT에 관한 연구
곽상현,경신수,성만영,Kwak, Sang-Hyeon,Kyoung, Sin-Su,Sung, Man-Young 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.11
The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.
PIN 다이오드 - PNP 트랜지스터 결합모델에 의한 1,700 V급 NPT 트랜치 IGBT의 해석에 관한 연구
이종석,경신수,강이구,성만영,Lee, Jong-Seok,Kyoung, Sin-Su,Kang, Ey-Goo,Sung, Man-Young 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.10
This paper presents a comprehensive mathematical analysis and simulation of trench IGBT with the help of PIN-PNP combinational model. Since trench IGBT is characteristically influenced by PIN diode, it may be almost impossible to analyze the trench IGBT using PNP-MOS modeling methods, even PIN-MOS techniques which neglect the hole current components coming into p-base region. A new PIN-PNP complementary cooperational model is developed in order to make up the drawbacks of existing models. It would allow us to make qualitative analysis as well as simulation about switching and on-state characteristics of 1,700 V trench IGBT. Moreover, if we improve the PIN diode effects through the optimization of trench structure, trench IGBT is expected to be one of the most promising devices in the not only high-voltage but also high speed switching device field.