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HF:H₂O₂:CH₃COOH 용액을 이용한 실리콘-져마늄 에피막의 화학적 선택 식각
안창근,정욱진,배영호,김광일,강봉구,권영규,손병기 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The selective chemical etching of Si_(1)-_(x)Ge_(x). heteroepitaxial layer grown by rapid thermal CVD (RTCVD) method has been studied with respect to Ge content ( 0.15 ≤ x ≤ 0.30 ). The properties of HF : H_(2)O_(2) : CH_(3)COOH (1:2:3) chemical etchant is highly selective in the Si_(1)-_(x)Ge_(x) / Si heteroepitaxial structure. The selectivity is presented better than 100 for Ge content (x≥0.20) and increased with Ge content in Si_(1)-_(x)Ge_(x) heteroepitaxial layer.