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Rehabilitative goals for patients undergoing lung retransplantation
( Massimiliano Polastri ),( Robert M. Reed ) 영남대학교 의과대학 2024 Yeungnam University Journal of Medicine Vol.41 No.2
Lung retransplantation (LRT) involves a second or subsequent lung transplant (LT) in a patient whose first transplanted graft has failed. LRT is the only treatment option for irreversible lung allograft failure caused by acute graft failure, chronic lung allograft dysfunction, or postoperative complications of bronchial anastomosis. Prehabilitation (rehabilitation before LT), while patients are on the waiting list, is recognized as an essential component of the therapeutic regimen and should be offered throughout the waiting period from the moment of listing until transplantation. LRT is particularly fraught with challenges, and prehabilitation to reduce frailty is one of the few opportunities to address modifiable risk factors (such as functional and motor impairments) in a patient population in which there is clearly room to improve outcomes. Although rehabilitative outcomes and quality of life in patients receiving or awaiting LT have gained increased interest, there is a paucity of data on rehabilitation in patients undergoing LRT. Frailty is one of the few modifiable risk factors of retransplantation that is potentially preventable. As such, it is imperative that professionals involved in the field of retransplantation conduct research specifically exploring rehabilitative techniques and outcomes of value for patients receiving LRT, because this area remains unexplored.
Bhuiyan, Maruf A.,Zhou, Hong,Chang, Sung-Jae,Lou, Xiabing,Gong, Xian,Jiang, Rong,Gong, Huiqi,Zhang, En Xia,Won, Chul-Ho,Lim, Jong-Won,Lee, Jung-Hee,Gordon, Roy G.,Reed, Robert A.,Fleetwood, Daniel M. Professional Technical Group on Nuclear Science 2018 IEEE transactions on nuclear science Vol.65 No.1
<P>The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a radiation-tolerant gate dielectric, with only small shifts in operating parameters of metal–oxide–semiconductor HEMTs observed at doses up to 1 Mrad(SiO<SUB><I>2</I></SUB>). Bias-induced electron trapping and radiation-induced-hole trapping can occur in the MgCaO, depending on the applied bias during stress and/or irradiation. AC transconductance measurements are used to help understand charge trapping in these devices.</P>