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Bhuiyan, Maruf A.,Zhou, Hong,Chang, Sung-Jae,Lou, Xiabing,Gong, Xian,Jiang, Rong,Gong, Huiqi,Zhang, En Xia,Won, Chul-Ho,Lim, Jong-Won,Lee, Jung-Hee,Gordon, Roy G.,Reed, Robert A.,Fleetwood, Daniel M. Professional Technical Group on Nuclear Science 2018 IEEE transactions on nuclear science Vol.65 No.1
<P>The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a radiation-tolerant gate dielectric, with only small shifts in operating parameters of metal–oxide–semiconductor HEMTs observed at doses up to 1 Mrad(SiO<SUB><I>2</I></SUB>). Bias-induced electron trapping and radiation-induced-hole trapping can occur in the MgCaO, depending on the applied bias during stress and/or irradiation. AC transconductance measurements are used to help understand charge trapping in these devices.</P>