Chemical Vapor Deposition (CVD) method is widely used for high quality synthesis of nanomaterials such as graphene, CNT, and MoS2. However, CVD synthesis for Niobium compounds (Niobium oxide, Niobium carbide, Niobium selenide), especially Niobium sele...
Chemical Vapor Deposition (CVD) method is widely used for high quality synthesis of nanomaterials such as graphene, CNT, and MoS2. However, CVD synthesis for Niobium compounds (Niobium oxide, Niobium carbide, Niobium selenide), especially Niobium selenides, has not been studied much.
Niobium oxide (Nb2O5) can be used for various applications including gas sensors, photo-catalysts, photo-detectors, batteries, and solar cell. Also, Niobium carbide (NbC) is promising for various applications such as a reinforced phase in an iron matrix, hard coating, and wear protection. In case of Niobium selenides, NbSe2 and NbSe3 are well known materials because they exhibit interesting physical properties like the presence of both superconductivity (SC) and charge density waves (CDW) and the competition between SC and CDW. In this study, we aimed to study on CVD synthesis of Niobium compounds Furthermore, all three compounds have grown epitaxially on c-plane sapphire substrates, and the mechanism for the epitaxial growth will also be discussed.