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Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers
Zydr unas Podlipskas,Ram unas Aleksiej unas,Saulius Nargelas,Ye Seul Yun,J uras Mickevi cius,Ar unas Kadys,Chong Yun Kang,Michael S. Shur,Max Shatalov,Jinwei Yang,Remis Gaska 한국물리학회 2016 Current Applied Physics Vol.16 No.6
Nonradiative recombination rate and diffusivity of nonequilibrium carriers were modified by intense laser pulses in AlGaN epilayers with Al content ranging from 16 to 71%. The epilayers were examined before and after the photomodification using light-induced transient grating and photoluminescence spectroscopy techniques. The photomodification resulted in (i) enhancement of the nonradiative recombination rate and (ii) large changes of the diffusion coefficient of the nonequilibrium carriers, without imposing any macroscopic structural damage to the epilayers. The photomodification effect on the recombination rate was stronger in the layers with higher Al content indicating the involvement of the Al atoms in this process. The carrier diffusivity exhibited a rapid initial increase as a consequence of the photomodification followed by a slow decline, as the photomodification duration was increased. The enhancement of the diffusion coefficient of up to 2.4 times was accompanied by 13% decrease in the carrier lifetime.