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Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT
Wang, Chong,Wel, Xiao-Xiao,Zhao, Meng-Di,He, Yun-Long,Zheng, Xue-Feng,Mao, Wei,Ma, Xiao-Hua,Zhang, Jin-Cheng,Hao, Yue The Korean Institute of Electrical and Electronic 2017 Transactions on Electrical and Electronic Material Vol.18 No.3
This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.
XiaoYing He,LiBing Ma,Xiao-ning He,Wan-tong Si,Yue-Mao Zheng 대한수의학회 2016 Journal of Veterinary Science Vol.17 No.2
Previous studies have established a bovine mammary gland epithelia cells in vitro model by the adenovirus-mediated telomerase (hTERT-bMGEs). The present study was conducted to confirm whether hTERT-bMGEs were effective target cells to improve the efficiency of transgenic expression and somatic cell nuclear transfer (SCNT). To accomplish this, a mammary-specific vector encoding human lysozyme and green fluorescent protein was used to verify the transgenic efficiency of hTERT-bMGEs, and untreated bovine mammary gland epithelial cells (bMGEs) were used as a control group. The results showed that the hTERT-bMGEs group had much higher transgenic efficiency and protein expression than the bMGEs group. Furthermore, the nontransgenic and transgenic hTERT-bMGEs were used as donor cells to evaluate the efficiency of SCNT. There were no significant differences in rates of cleavage or blastocysts or hatched blastocysts of cloned embryos from nontransgenic hTERT-bMGEs at passage 18 and 28 groups (82.8% vs. 81.9%, 28.6% vs. 24.8%, 58.6% vs. 55.3%, respectively) and the transgenic group (80.8%, 26.5% and 53.4%); however, they were significantly higher than the bMGEs group (71.2%, 12.8% and 14.8%), (p < 0.05). We confirmed that hTERT-bMGEs could serve as effective target cells for improving development of somatic cell cloned cattle embryos.
Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT
Chong Wang,Xiao-Xiao Wel,Meng-Di Zhao,Yun-Long He,Xue-Feng Zheng,Wei Mao,Xiao-Hua Ma,Jin-Cheng Zhang,Yue Hao 한국전기전자재료학회 2017 Transactions on Electrical and Electronic Material Vol.18 No.3
This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surfacemorphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltagesof the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formedunder the ohmic contact regions during high-temperature annealing. The samples with selective etching on theohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the differentradii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mappingmeasurement.
Structure and Electrical Performance of Na<sub>2</sub>C<sub>6</sub>O<sub>6</sub> under High Pressure
Wang, Xuan,Zhang, Peijie,Tang, Xingyu,Guan, Junjie,Lin, Xiaohuan,Wang, Yajie,Dong, Xiao,Yue, Binbin,Yan, Jinyuan,Li, Kuo,Zheng, Haiyan,Mao, Ho-kwang American Chemical Society 2019 The Journal of Physical Chemistry Part C Vol. No.
<P>Sodium rhodizonate (Na<SUB>2</SUB>C<SUB>6</SUB>O<SUB>6</SUB>) has very high theoretical capacity as a positive electrode material of sodium-ion batteries, but it still has problems such as low actual capacity and poor electronic/ionic conductivity. In order to improve its conductivity, we investigated its structure and electrical properties under high pressure. By performing in situ X-ray diffraction, Raman, infrared absorption, and alternating current impedance spectroscopy in the range of 0-30 GPa at room temperature, we observed a phase transition at ∼11 GPa, with the conductivity increasing by an order of magnitude. Above ∼20 GPa, Na<SUB>2</SUB>C<SUB>6</SUB>O<SUB>6</SUB> gradually amorphized. During the decompression process, the pressure regulation of the structure and properties of the material are reversible. Our study shows that applying external pressure is an effective tool to improve the conductivity of molecular battery materials. The investigation will help to obtain next-generation electrode materials.</P> [FIG OMISSION]</BR>