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New synthesis of MnSi<sub>2</sub> thin film and its thermoelectric properties
Shin, Yooleemi,Rhim, Sung Hyon,Duong, Anh Tuan,Nguyen, Van Quang,Hong, Soon Cheol,Cho, Sunglae,Park, Hyun-Min American Institute of Physics 2015 Journal of Vacuum Science & Technology. A Vol.33 No.6
<P> The authors report the formation of a new manganese silicide phase, MnSi<SUB>2</SUB>, using an intermixing method that involves evaporating a manganese thin film on a silicon substrate at a high temperature of 600 °C. The crystal structure of MnSi<SUB>2</SUB> is tetragonal with lattice constants of a=5.518Å and c=17.449Å, identical to that of Mn<SUB>4</SUB>Si<SUB>7</SUB>. Analysis of the film using high-angle annular dark-field imaging confirmed that the composition ratio of Mn and Si was 1:2. The electric resistivity and Seebeck coefficient of the film were 2.08×10<SUP>-3</SUP> Ω cm and 107.84μV/K at 410K, respectively, which resulted in a maximum power factor of 5.60×10<SUP>-4</SUP> W/K<SUP>2</SUP>m. </P>