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        Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

        Xundi Zhang,Chenlin Yang,Yumei Zhang,Anmin Hu,Ming Li,Liming Gao,Huiqin Ling,Tao Hang 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.4

        Ultra-thin wafer fabrication has become a hot spot in recent years with the growing demand for small size and high performance electronic devices. However, far less research focused on the damage behavior in ultra-thin wafer. In this work, 300 mm diameter silicon wafer was thinned to 6 µm thick by grinding plus ultra-precision dry polishing. The damage behavior before and after the dry polishing was discussed. Mechanical and surface analysis showed that the dry polishing process can help improve the strength and surface uniformity of ultra-thin wafer by removing high pressure phase and micro cracks. Series of nano beam diffraction patterns revealed the stress induced by the thinning process only existed in surface. High resolution transmission electron microscopy images analyzed by geometric phase approach indicated that surface dislocations can move across the wafer and reached bottom device layers during the dry polishing, increasing the risk of electrical deterioration. The findings are of great significance to the study on process optimization of ultra-thin wafer and provide insights into the reliability of advanced electronic packaging.

      • KCI등재

        Low-temperature insertion bonding using electroless Cu-Co-P micro-cones array with controllable morphology

        Yaqian Sun,Jing Wang,Xundi Zhang,Chenlin Yang,Anmin Hu,Tao Hang,Yunwen Wu,Huiqin Ling,Ming Li 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.6

        At present, thermal compression bonding based on Cu and lead-free Sn based solder is often limited by high bonding temperature,which is higher than the melting point of solder (218 ℃). In this paper, we reported a low-temperature solid stateinsertion bonding method based on electroless Cu-Co-P micro-cones array. By adjusting the mass ratio of CuSO 4 ·5H 2 O andCoSO 4 ·7H 2 O, a series of Cu-Co-P micro-cones with diff erent morphologies were prepared. The Cu-Co-P micro-cones withhigher proportion of copper were sharper and denser and (111) orientation was also more. It was found that reducing theheight and density of micro-cones was conducive to achieve seamless bonding at lower temperature and force such as 170℃ and 750 gf. By optimizing the morphology of micro-cones, such as height, bottom diameter, vertex angle and density, theseamless and reliable bonding with high shear strength (39.9 MPa) could be achieved at 170 ℃ bonding temperature and1000 gf bonding force. The transmission electron microscopy results showed that intermetallic compounds including Cu 6 Sn 5and Cu 3 Sn existed at bonding interface, which indicated that signifi cant atomic diff usion had occurred between Cu-Co-Pmicro-cones and Sn based solder. Probable mechanisms for low-temperature insertion bonding were discussed.

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