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Daoyou Guo,Xinyuan Qin,Ming Lv,Haoze Shi,Yuanli Su,Guosheng Yao,Shunli Wang,Chaorong Li,Peigang Li,Weihua Tang 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.6
Highly (201) oriented Zn-doped β-Ga2O3 thin films with differentdopant concentrations were grown on (0001) sapphire substrates byradio frequency magnetron sputtering. With the increase of Zn dopantconcentration, the crystal lattice expands, the energy band gap shrinks,and the oxygen vacancy concentration decreases. Both the metalsemiconductor metal (MSM) structure photodetectors based on thepure and Zn-doped β-Ga2O3 thin films exhibit solar blind UVphotoelectric property. Compared to the pure β-Ga2O3 photodetector,the Zn-doped one exhibits a lower dark current, a higher photo/darkcurrent ratio, a faster photoresponse speed, which can be attributed tothe decreases of oxygen vacancy concentration.