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      저자 : Wanshu Li (검색결과 2 건)
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        Solution-processed WOx hole injection layer for efficient fluorescent blue organic light-emitting diode

        Wanshu Li,Yan Zhang,Qinghong Zheng,Kai Xu,Xiuyun Zhang,Liming Liu,Bin Wei,Lihui Wang,Jiwen Xu,Xiaowen Zhang 한국물리학회 2018 Current Applied Physics Vol.18 No.5

        Solution-processed tungsten oxide (s-WOx) interfacial layer for efficient hole injection in fluorescent blue organic light-emitting diode (OLED) is demonstrated. The OLED using 2-methyl-9,10-bis(naphthalen-2- yl)anthracene (MADN) as emitter shows luminous efficiency of 3.3 cd/A, power efficiency of 2.5 lm/W and external quantum efficiency of 4.6% with Commission Internationale d'Eclairage (CIE) color coordinates of (0.154, 0.102). Using MADN doped 1-4-di-[4-(N,N-diphenyl)amino]styryl-benzene as emitter, luminous efficiency of 10.8 cd/A, power efficiency of 6.4 lm/W and external quantum efficiency of 7.2% with CIE color coordinates of (0.167, 0.283) are achieved. Atomic force microscopy and X-ray photoelectron spectroscopy show that s-WOx features superior film morphology and non-stoichiometry with slight oxygen deficiency. Current-voltage characteristics and impedance spectroscopy analysis indicate that s-WOx behaves slightly enhanced hole injection and accordingly contributes to improved device performance in comparison with conventional vacuum thermal evaporation WOx. Our results pave an alternative way for broadeningWOx application with solution process and advancing fluorescent blue OLEDs.

      • KCI등재

        The visible and ultraviolet organic light-emitting diodes with germanium dioxide as facile solution-processed anode buffer layer

        Kai Xu,Zhenchang Tang,Yan Zhang,Wanshu Li,Haiou Li,Lihui Wang,Li-Ming Liu,Hong-Hang Wang,Feng Chi,Xiaowen Zhang 한국물리학회 2019 Current Applied Physics Vol.19 No.10

        Germanium dioxide (GeO2) aqueous solutions are facilely prepared and the corresponding anode buffer layers (ABLs) with solution process are demonstrated. Atomic force microscopy, X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements show that solution-processed GeO2 behaves superior film morphology and enhanced work function. Using GeO2 as ABL of organic light-emitting diodes (OLEDs), the visible device with tris(8-hydroxy-quinolinato)aluminium as emitter gives maximum luminous efficiency of 6.5 cd/A and power efficiency of 3.5 lm/W, the ultraviolet device with 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl- 1,2,4-triazole as emitter exhibits short-wavelength emission with peak of 376 nm, full-width at halfmaximum of 42 nm, maximum radiance of 3.36 mW/cm2 and external quantum efficiency of 1.5%. The performances are almost comparable to the counterparts with poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) as ABL. The current, impedance, phase and capacitance as a function of voltage characteristics elucidate that the GeO2 ABL formed from appropriate concentration of GeO2 aqueous solution favors hole injection enhancement and accordingly promoting device performance.

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