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        Mapping of Local Conductivity Variations on Fragile Nanopillar Arrays by Scanning Conductive Torsion Mode Microscopy

        Weber, Stefan A. L.,Haberkorn, Niko,Theato, Patrick,Berger, Rü,diger American Chemical Society 2010 NANO LETTERS Vol.10 No.4

        <P>A gentle method that combines torsion mode topography imaging with conductive scanning force microscopy is presented. By applying an electrical bias voltage between tip and sample surface, changes in the local sample conductivity can be mapped. The topography and local conductivity variations on fragile free-standing nanopillar arrays were investigated. These samples were fabricated by an anodized aluminum oxide template process using a thermally cross-linked triphenylamine-derivate semicondcutor. The nanoscale characterization method is shown to be nondestructive. Individual nanopillars were clearly resolved in topography and current images that were recorded simultaneously. Local current−voltage characteristics suggest a space-charge limited conduction in the semiconducting nanopillars.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-4/nl9035274/production/images/medium/nl-2009-035274_0004.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl9035274'>ACS Electronic Supporting Info</A></P>

      • Template-Based Preparation of Free-Standing Semiconducting Polymeric Nanorod Arrays on Conductive Substrates

        Haberkorn, Niko,Weber, Stefan A. L.,Berger, Rü,diger,Theato, Patrick American Chemical Society 2010 ACS APPLIED MATERIALS & INTERFACES Vol.2 No.6

        <P>We describe the synthesis and characterization of a cross-linkable siloxane-derivatized tetraphenylbenzidine (DTMS-TPD), which was used for the fabrication of semiconducting highly ordered nanorod arrays on conductive indium tin oxide or Pt-coated substrates. The stepwise process allow fabricating of macroscopic areas of well-ordered free-standing nanorod arrays, which feature a high resistance against organic solvents, semiconducting properties and a good adhesion to the substrate. Thin films of the TPD derivate with good hole-conducting properties could be prepared by cross-linking and covalently attaching to hydroxylated substrates utilizing an initiator-free thermal curing at 160 °C. The nanorod arrays composed of cross-linked DTMS-TPD were fabricated by an anodic aluminum oxide (AAO) template approach. Furthermore, the nanorod arrays were investigated by a recently introduced method allowing to probe local conductivity on fragile structures. It revealed that more than 98% of the nanorods exhibit electrical conductance and consequently feature a good electrical contact to the substrate. The prepared nanorod arrays have the potential to find application in the fabrication of multilayered device architectures for building well-ordered bulk-heterojunction solar cells.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2010/aamick.2010.2.issue-6/am100085t/production/images/medium/am-2010-00085t_0002.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am100085t'>ACS Electronic Supporting Info</A></P>

      • Atomistic modeling of metallic nanowires in silicon.

        Ryu, Hoon,Lee, Sunhee,Weber, Bent,Mahapatra, Suddhasatta,Hollenberg, Lloyd C L,Simmons, Michelle Y,Klimeck, Gerhard RSC Pub 2013 Nanoscale Vol.5 No.18

        <P>Scanning tunneling microscope (STM) lithography has recently demonstrated the ultimate in device scaling with buried, conducting nanowires just a few atoms wide and the realization of single atom transistors, where a single P atom has been placed inside a transistor architecture with atomic precision accuracy. Despite the dimensions of the critical parts of these devices being defined by a small number of P atoms, the device electronic properties are influenced by the surrounding 10(4) to 10(6) Si atoms. Such effects are hard to capture with most modeling approaches, and prior to this work no theory existed that could explore the realistic size of the complete device in which both dopant disorder and placement are important. This work presents a comprehensive study of the electronic and transport properties of ultra-thin (<10 nm wide) monolayer highly P δ-doped Si (Si:P) nanowires in a fully atomistic self-consistent tight-binding approach. This atomistic approach covering large device volumes allows for a systematic study of disorder on the physical properties of the nanowires. Excellent quantitative agreement is observed with recent resistance measurements of STM-patterned nanowires [Weber et al., Science, 2012, 335, 64], confirming the presence of metallic behavior at the scaling limit. At high doping densities the channel resistance is shown to be insensitive to the exact channel dopant placement highlighting their future use as metallic interconnects. This work presents the first theoretical study of Si:P nanowires that are realistically extended and disordered, providing a strong theoretical foundation for the design and understanding of atomic-scale electronics.</P>

      • KCI등재후보

        Application of carbon nanotubes to silicon nitride matrix reinforcements

        Cs. Bal?zsi,F. Weber,Zs. Kover,Z. Shen,Z. Konya,Zs Kasztovszky,Z. Vertesy,L.P. Biro,I. Kiricsi,P. Arato 한국물리학회 2006 Current Applied Physics Vol.6 No.2

        tiwall carbon nanotube (MWNT) reinforced silicon nitride composites. Morphological, structural, compositional investigations, aswell as mechanical characterization have been performed. The rst results show that carbon nanotubes have been preserved in com-posite structure during these two high-temperature processes. Carbon nanotubes have been found to have good adherence to thesilicon nitride grains as observed for both processing methods. Moreover, carbon nanotubes may serve as crystallization sitesand seeds for silicon nitride grain growth. Signicant dierences have been found between composites prepared by these two sin-obtained by spark plasma sintering. The conventional sintering resulted in partially densied composites with coarser grainstructure

      • Highly efficient DSB-free base editing for streptomycetes with CRISPR-BEST

        Tong, Yaojun,Whitford, Christopher M.,Robertsen, Helene L.,Blin, Kai,Jørgensen, Tue S.,Klitgaard, Andreas K.,Gren, Tetiana,Jiang, Xinglin,Weber, Tilmann,Lee, Sang Yup National Academy of Sciences 2019 PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF Vol.116 No.41

        <P><B>Significance</B></P><P>Although CRISPR-Cas9 tools dramatically simplified the genetic manipulation of actinomycetes, significant concerns of genome instability caused by the DNA double-strand breaks (DSBs) and common off-target effects remain. To address these concerns, we developed CRISPR-BEST, a DSB-free and high-fidelity single-nucleotide–resolution base editing system for streptomycetes and validated its use by determining editing properties and genome-wide off-target effects. Furthermore, our CRISPR-BEST toolkit supports Csy4-based multiplexing to target multiple genes of interest in parallel. We believe that our CRISPR-BEST approach is a significant improvement over existing genetic manipulation methods to engineer streptomycetes, especially for those strains that cannot be genome-edited using normal DSB-based genome editing systems, such as CRISPR-Cas9.</P><P>Streptomycetes serve as major producers of various pharmacologically and industrially important natural products. Although CRISPR-Cas9 systems have been developed for more robust genetic manipulations, concerns of genome instability caused by the DNA double-strand breaks (DSBs) and the toxicity of Cas9 remain. To overcome these limitations, here we report development of the DSB-free, single-nucleotide–resolution genome editing system CRISPR-BEST (CRISPR-Base Editing SysTem), which comprises a cytidine (CRISPR-cBEST) and an adenosine (CRISPR-aBEST) deaminase-based base editor. Specifically targeted by an sgRNA, CRISPR-cBEST can efficiently convert a C:G base pair to a T:A base pair and CRISPR-aBEST can convert an A:T base pair to a G:C base pair within a window of approximately 7 and 6 nucleotides, respectively. CRISPR-BEST was validated and successfully used in different <I>Streptomyces</I> species. Particularly in nonmodel actinomycete <I>Streptomyces collinus</I> Tu¨365, CRISPR-cBEST efficiently inactivated the 2 copies of <I>kirN</I> gene that are in the duplicated kirromycin biosynthetic pathways simultaneously by STOP codon introduction. Generating such a knockout mutant repeatedly failed using the conventional DSB-based CRISPR-Cas9. An unbiased, genome-wide off-target evaluation indicates the high fidelity and applicability of CRISPR-BEST. Furthermore, the system supports multiplexed editing with a single plasmid by providing a Csy4-based sgRNA processing machinery. To simplify the protospacer identification process, we also updated the CRISPy-web (https://crispy.secondarymetabolites.org), and now it allows designing sgRNAs specifically for CRISPR-BEST applications.</P>

      • Preparing DNA-mimicking multi-line nanocaterpillars via in situ nanoparticlisation of fully conjugated polymers

        Lee, I. H.,Amaladass, P.,Choi, I.,Bergmann, V.,Weber, S. L.,Choi, T. L. Royal Society of Chemistry 2016 Polymer chemistry Vol.7 No.7

        <P>A unique hierarchical evolution from single-line nanocaterpillars to multi-line nanocaterpillars and then to multi-line nanocaterpillars bearing a few long-chain branches was demonstrated by in situ nanoparticlisation of fully conjugated poly(2,5-dihexyloxy-1,4-phenylene)-block-poly(3-methylthiophene) (PPP-b-P3MT). PPP-b-P3MTs of various block ratios were successfully synthesised by the Grignard metathesis polymerization method; moreover, these block copolymers underwent spontaneous self-assembly during the polymerization owing to the solvophobicity or strong p-p interactions of the core block, i.e. P3MT. These in situ generated PPP-b-P3MT NPs were quite different from the previously reported NPs generated from poly(2,5-dihexyloxy-1,4-phenylene)-block-polythiophene (PPP-b-PT). AFM and TEM images revealed that PPP-b-P3MTs formed single-to multi-line nanocaterpillars, whereas PPP-b-PTs only formed shorter single-line nanocaterpillars. On the basis of PXRD and UV-vis data, we speculated that this interesting morphology of multi-line nanocaterpillars, resembling duplex DNA, arose from different packing modes and crystallinity as well as improved solubility of the P3MT core compared with the NPs containing the PT core.</P>

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