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Investigation of the Dielectric Function of Solution-Processed InGaZnO Films Using Ellipsometry
Kim, Tae Jung,Yoon, Jae Jin,Hwang, Soo Min,Choi, Jun Hyuk,Hwang, Soon Yong,Ghong, Tae Ho,Barange, Nilesh,Kim, Jun Young,Kim, Young Dong,Joo, Jinho American Scientific Publishers 2012 Journal of Nanoscience and Nanotechnology Vol.12 No.7
<P>The optical properties of InGaZnO (IGZO) films grown through the sol-gel process as a function of sintering time were investigated with spectroscopic ellipsometry (SE). The IGZO precursor sol was prepared by mixing In nitrate, Ga nitrate, and Zn acetate at a molar ratio of In:Ga:Zn = 3:1:1. The solution was deposited on a SiO2/Si substrate via spin coating. Sintering was performed at 400 degrees C for 1-15 h in an ambient atmosphere. The optical properties were measured over the range 1.12-6.52 eV via variable angle SE, at room temperature. The angle of incidence was varied from 50 to 70 degrees in 5 degree steps. To extract the pure optical properties of IGZO, multilayer-structure calculation with Tauc-Lorentz dispersion relation for IGZO was performed. The changes in the dielectric function of the IGZO films with varying sintering time were observed. The resultant optical properties can be related to the concentration of oxygen vacancies in the material, which can be controlled by the sintering time.</P>
Effect of the Ga Ratio on the Dielectric Function of Solution-processed InGaZnO Films
김태중,윤재진,Tae Ho Ghong,Nilesh Barange,Jun Young Kim,Soon Young Hwang,김영동,황수민,Jun Hyuk Choi,Jinho Joo 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.6
Optical properties of InGaZnO (IGZO) films grown by the sol-gel process for various Ga ratios were investigated by spectroscopic ellipsometry (SE). The IGZO precursor sols were prepared at a molar ratio of In:Ga:Zn = 3:x:1 (0.0 ≤ x ≤ 1.5), deposited on SiO_2/Si substrates by spin coating, and sintered at 400 °C for 6 h in an ambient atmosphere. The optical properties were measured from 1.12 to 6.52 eV by variable-angle SE at room temperature. The angle of incidence was varied from 50° to 70° in steps of 5°. We clearly observed a blue shift of the bandgap energies and changes in the dielectric functions of the films with increasing Ga fraction. The change of optical properties might be understood by the concentration of oxygen vacancies, which can be modulated by varing the Ga content in IGZO.