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RISS 인기검색어
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- 저자 : Shramana Chakraborty (검색결과 1 건)
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Comparisons between Dual and Tri Material Gate on a 32 nm Double Gate MOSFET
Arpan Dasgupta,Rahul Das,Shramana Chakraborty,Arka Dutta,Atanu Kundu,Chandan K. Sarkar 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2016 NANO Vol.11 No.10
The paper reports a comparative analysis between the dual material gate double gate (DMG-DG) nMOSFET and the tri material gate double gate (TMG-DG) nMOSFET in terms of their analog and RF performance. Three different devices having the DMG-DG structure have been considered. Each of the devices have different higher workfunction material gate length (L1) to lower workfunction material gate length (L2) ratio (L1:L2). Along with the three devices, the performance of the TMG-DG nMOSFET is compared. The analog parameters considered for the comparison are the drain current (Ids), the transconductance (gm), the transconductance generation factor (gm/Ids) and the intrinsic gain (gmRo). The drain induced barrier lowering (DIBL) of the devices is compared. The RF analysis is performed using the non quasi static (NQS) approach. We consider the intrinsic gate to source capacitances (Cgs), the intrinsic gate to drain capacitance (Cgd), the intrinsic gate to source resistances (Rgs), the intrinsic gate to drain resistance (Rgd), the transport delay (τm), the unity current gain cut-off frequency (fT ) and the max frequency of oscillation (fmax) for the RF comparisons. A single stage amplifier is also implemented using the devices for a circuit comparison.
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