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Single electron transistor with a single conjugated molecule
Sergey Kubatkin,Andrey Danilov,jean-Luc Br?as,Thomas Bj?nholm,Mattias Hjort,Jerome Cornil,Nicolai Stuhr-Hansen,Per Hedeg?d 한국물리학회 2004 Current Applied Physics Vol.4 No.5
We report on a single electron transistor (SET) where the electronic levels of a singlep-conjugated molecule control the electron transport properties. The molecule can be in several distinct charged states from +3 to)4. The experiment closely resembles electrochemical measurements allowing us to report on quantitative measurements of the redox potentials (or ionization potentials)of a single molecule in a solid state device. The molecular excitation energies extracted from the SET measurements are strongly correlated with electrochemical data. In contrast, the HOMOLUMO gap is strongly reduced in a solid state environment, ascompared to solution. We suggest that this surprising eect may be caused by image charges generated in the source and drain electrodes. They will result in a strong localization of the charges on the molecule.
Polymer-encapsulated molecular doped epigraphene for quantum resistance metrology
He, Hans,Lara-Avila, Samuel,Kim, Kyung Ho,Fletcher, Nick,Rozhko, Sergiy,Bergsten, Tobias,Eklund, Gunnar,Cedergren, Karin,Yakimova, Rositsa,Park, Yung Woo,Tzalenchuk, Alexander,Kubatkin, Sergey BUREAU INTERNATIONAL DES POIDS ET MESURES 2019 METROLOGIA -BERLIN- Vol.56 No.4
<P>One of the aspirations of quantum metrology is to deliver primary standards directly to end-users thereby significantly shortening the traceability chains and enabling more accurate products. Epitaxial graphene grown on silicon carbide (epigraphene) is known to be a viable candidate for a primary realisation of a quantum Hall resistance standard, surpassing conventional semiconductor two-dimensional electron gases, such as those based on GaAs, in terms of performance at higher temperatures and lower magnetic fields. The bottleneck in the realisation of a turn-key quantum resistance standard requiring minimum user intervention has so far been the need to fine-tune the carrier density in this material to fit the constraints imposed by a simple cryo-magnetic system. Previously demonstrated methods, such as via photo-chemistry or corona discharge, require application prior to every cool-down as well as specialist knowledge and equipment. To this end we perform metrological evaluation of epigraphene with carrier density tuned by a recently reported permanent molecular doping technique. Measurements at two National Metrology Institutes confirm accurate resistance quantisation below 5 nΩ Ω<SUP>−1</SUP>. Furthermore, samples show no significant drift in carrier concentration and performance on multiple thermal cycles over three years. This development paves the way for dissemination of primary resistance standards based on epigraphene.</P>