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이승기,안종현,Lee, Seoung-Ki,Ahn, Jong-Hyun 한국세라믹학회 2013 한국세라믹학회지 Vol.50 No.5
Graphene has attracted considerable attention since its first production from graphite in 2004, due to its outstanding physical and chemical properties. The development of production methodsfor large scale, high quality graphene films is an essentialstep toward realizing graphene applications such as transparent, conductive film. Chemical deposition methods, using metal catalystsand gaseous carbon sources, have been extensively developed for large area synthesis. In this paper, wereview recent progress ingraphene production, and survey the role of graphene electrodes in various electronic devices such as touch panels, solar cells, solid statelighting and microelectronic devices.
순수한 물 용매에서 Langmuir-Blodgett 법으로 제조한 이황화몰리브덴 박막의 전기적 특성 관찰
조대현(Dae-Hyun Cho),이승기(Seoung-Ki Lee),이창구(Changgu Lee) 대한전기학회 2019 전기학회논문지 Vol.68 No.2
In this study, nanometer-thick molybdenum disulfide (MoS₂) films were fabricated by Langmuir-Blodgett method and morphological characteristics and electrical properties were observed. The thickness of the thin films measured by AFM was about 10 nm, and the sheets constituting the thin films had a width of 100-400 nm in the plane direction. This means that micrometer-level molybdenum disulfide powder is dispersed in pure water through ultrasonic waves and self-assembled in the form of a thin film from nano-sheets by the Langmuir-Blodgett method. Raman spectra of the thin films showed that the nanometer-thick molybdenum disulfide films were obtained without the chemical change of the molybdenum disulfide. We conclude that the MoS₂ films fabricated by Langmuir-Blodgett method have semiconducting property from the measurement of 2.5 times amplified current than dark state (at 0.5 V). Furthermore, we analyze the electrical properties of MoS₂ film by measuring channel current depend on gate voltage. From the conventional I-V characteristic, we confirm that the MoS₂ film has n-type semiconducting characteristic.
김광섭(Kwang-Seop Kim),이희정(Hee-Jung Lee),이창구(Changgu Lee),이승기(Seoung-Ki Lee),장호욱(Ho-Uk Jang),안종현(Jong-Hyun Ahn),김재현(Jae-Hyun Kim),이학주(Hak-Joo Lee) 대한기계학회 2011 대한기계학회 춘추학술대회 Vol.2011 No.4
본 연구에서는 CVD 방법으로 성장된 그래핀의 마찰 특성을 알아보기 위해 마이크로트라이보미터를 이용하여 마찰력을 측정하였으며, SiO₂ 표면에서 측정된 마찰력과 비교하였다. 실험 결과, SiO₂ 기판 위에 코팅된 그래핀은 마찰 저감 효과가 매우 뛰어난 것으로 확인되었다. CVD 방법으로 성장된 그래핀을 MEMS와 NEMS에 적용하여 윤활막으로 사용할 경우 접촉면 사이의 마찰력을 효과적으로 감소시킬 수 있을 거라 예상된다. Surface forces, such as adhesion and friction forces, are crucial in the fabrication and operation of microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) as well as in the nanofabrication processes such as nanoimprint lithography and transfer assembly process. Various lubricant materials, patterns, and surface treatment processes have been developed for control of the interfacial forces and lubrication between contacting surfaces. Graphite is a traditional good solid lubricant because of its lamella structure with low shearing resistance. Graphene may be one of good candidates for lubrication on the micro/nanoscale because graphene is atomically thin and strong, and is stacked in lamella structure similar to graphite. In this study, frictional properties of graphene synthesized by chemical vapor deposition (CVD) were investigated. The results show that the graphene is so effective to reduce friction.