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        Parametric Studies of Pulsed Laser Deposition of Indium Tin Oxide and Ultra-thin Diamond-like Carbon for Organic Light-emitting Devices

        Teck-Yong Tou,Thian-Khok Yong,Seong-Shan Yap,Ren-Bin Yang,Wee-Ong Siew,Ho-Kwang Yow 한국광학회 2009 Current Optics and Photonics Vol.13 No.1

        Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at 200℃ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to 2×10-4 Ω cm while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+Alq3)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+Alq3)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

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        Numerical and experimental studies of mixed-host organic light emitting diodes

        Riku Chowdhury,Teng-Sian Ong,Yeh-Yee Kee,Seong-Shan Yap,Teck-Yong Tou 한국물리학회 2015 Current Applied Physics Vol.15 No.11

        Electrical characteristic and luminance of three mixed-host organic light emitting diodes (OLEDs): namely the uniformly mixed, step-wise graded and mixed, and continuously graded and mixed, were compared with the conventional hetero-junction OLED in both numerical and experimental studies. These mixed-host OLEDs were fabricated by a mixed-source thermal evaporation process, and half-cell devices were also fabricated to provide some input parameters for OLED simulations. The current efficiencies were largely influenced by their device structures and strongly agreed with the computed current balance factors. The improved mixed-host OLED performances can be discussed with aid from simulations, which include spatial distributions of electron and hole, carrier mobility, electric field profiles, the total recombination rates in the light emitting layer.

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