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        Electrical and Dielectric Properties and Intersection Behavior of G/!-V Plots for Al/Co-PVA/p-Si (MPS) Structures at Temperatures below Room Temperature

        Ibrahim Yucedag,Ahmet Kaya,Semsettin Altindal,Ibrahim Uslu 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.12

        Both the electrical and the dielectric properties of the Al/Co-doped polyvinyl alcohol/p-Simetal-polymer-semiconductor (MPS) structure have been studied using temperature-dependentadmittance-voltage (C/G-V) measurements at temperatures below room temperature at 300 kHz. The C-V plot indicates two peaks for each temperature corresponding to inversion and accumulationregions, respectively. The first peak was attributed to a particular distribution of interfacetraps (Dit), and the second was attributed to the series resistance (Rs) and interfacial polymerlayer. G/!-V plots show almost U-shape behavior for all temperatures and a crossing at almost 3V. Such behavior of the G/!-V plots may be attributed to the lack of free charge at low temperatures. After this intersection point, while the value of the capacitance (C) starts decreasing, theG/! continues to increase. The temperature-dependent real and imaginary parts of the dielectricconstant ("0, "00) and of the electric modulus (M0, M00), as well as the ac electrical conductivity(ac), of structure were obtained using C and G data before and after the intersection point (at2 and 6 V), respectively. Experimental results show that the "0, "00, loss tangent (tan), ac, M0,and M00 values were strong functions of the temperature and the applied bias voltage. In addition,G/!-T and "00-T plots show two different behaviors, one before and the other after the intersectionpoint.

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